Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductor
| Main Author: | |
|---|---|
| Publication Date: | 2012 |
| Other Authors: | , , |
| Format: | Article |
| Language: | eng |
| Source: | Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) |
| Download full: | http://hdl.handle.net/10400.1/3314 |
Summary: | Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explained in terms of an equivalent circuit. |
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Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductorResistive Random Access Memory (RRAM)SwitchingElectrical BistabilityNon-Volatile MemoryNegative Differential Resistance (NDR)Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explained in terms of an equivalent circuit.SpringerSapientiaRocha, Paulo R. F.Kiazadeh, AsalChen, Q.Gomes, Henrique L.2014-01-09T10:16:10Z20122014-01-02T21:06:14Z2012-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10400.1/3314engAUT: HGO00803;http://dx.doi.org/10.1007/978-3-642-28255-3_59info:eu-repo/semantics/openAccessreponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiainstacron:RCAAP2025-02-18T17:45:33Zoai:sapientia.ualg.pt:10400.1/3314Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireinfo@rcaap.ptopendoar:https://opendoar.ac.uk/repository/71602025-05-28T20:34:34.902265Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) - FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiafalse |
| dc.title.none.fl_str_mv |
Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductor |
| title |
Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductor |
| spellingShingle |
Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductor Rocha, Paulo R. F. Resistive Random Access Memory (RRAM) Switching Electrical Bistability Non-Volatile Memory Negative Differential Resistance (NDR) |
| title_short |
Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductor |
| title_full |
Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductor |
| title_fullStr |
Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductor |
| title_full_unstemmed |
Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductor |
| title_sort |
Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductor |
| author |
Rocha, Paulo R. F. |
| author_facet |
Rocha, Paulo R. F. Kiazadeh, Asal Chen, Q. Gomes, Henrique L. |
| author_role |
author |
| author2 |
Kiazadeh, Asal Chen, Q. Gomes, Henrique L. |
| author2_role |
author author author |
| dc.contributor.none.fl_str_mv |
Sapientia |
| dc.contributor.author.fl_str_mv |
Rocha, Paulo R. F. Kiazadeh, Asal Chen, Q. Gomes, Henrique L. |
| dc.subject.por.fl_str_mv |
Resistive Random Access Memory (RRAM) Switching Electrical Bistability Non-Volatile Memory Negative Differential Resistance (NDR) |
| topic |
Resistive Random Access Memory (RRAM) Switching Electrical Bistability Non-Volatile Memory Negative Differential Resistance (NDR) |
| description |
Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explained in terms of an equivalent circuit. |
| publishDate |
2012 |
| dc.date.none.fl_str_mv |
2012 2012-01-01T00:00:00Z 2014-01-09T10:16:10Z 2014-01-02T21:06:14Z |
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info:eu-repo/semantics/publishedVersion |
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info:eu-repo/semantics/article |
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article |
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publishedVersion |
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http://hdl.handle.net/10400.1/3314 |
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http://hdl.handle.net/10400.1/3314 |
| dc.language.iso.fl_str_mv |
eng |
| language |
eng |
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AUT: HGO00803; http://dx.doi.org/10.1007/978-3-642-28255-3_59 |
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info:eu-repo/semantics/openAccess |
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openAccess |
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application/pdf |
| dc.publisher.none.fl_str_mv |
Springer |
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Springer |
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