Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles

Bibliographic Details
Main Author: Kiazadeh, Asal
Publication Date: 2011
Other Authors: Rocha, P. R., Chen, Q., Gomes, Henrique L.
Language: eng
Source: Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
Download full: http://hdl.handle.net/10400.1/6646
Summary: It is demonstrated that planar structures based on silver nanoparticleshosted in a polymer matrix show reliable and reproducible switching properties attractive for non-volatile memory applications. These systems can be programmed between a low conductance (off-state) and high conductance (on-state) with an on/off ratio of 3 orders of magnitude, large retention times and good cycle endurance. The planar structure design offers a series of advantages discussed in this contribution, which make it an ideal tool to elucidate the resistive switching phenomena.
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spelling Resistive Random Access Memories (RRAMs) Based on Metal NanoparticlesIt is demonstrated that planar structures based on silver nanoparticleshosted in a polymer matrix show reliable and reproducible switching properties attractive for non-volatile memory applications. These systems can be programmed between a low conductance (off-state) and high conductance (on-state) with an on/off ratio of 3 orders of magnitude, large retention times and good cycle endurance. The planar structure design offers a series of advantages discussed in this contribution, which make it an ideal tool to elucidate the resistive switching phenomena.Springer-VerlagSapientiaKiazadeh, AsalRocha, P. R.Chen, Q.Gomes, Henrique L.2015-06-26T14:18:48Z20112011-01-01T00:00:00Zconference objectinfo:eu-repo/semantics/publishedVersionapplication/pdfhttp://hdl.handle.net/10400.1/6646eng978-3-642-19170-11868-4238AUT: HGO00803;https://dx.doi.org/10.1007/978-3-642-19170-1_65info:eu-repo/semantics/openAccessreponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiainstacron:RCAAP2025-02-18T17:14:38Zoai:sapientia.ualg.pt:10400.1/6646Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireinfo@rcaap.ptopendoar:https://opendoar.ac.uk/repository/71602025-05-28T20:15:02.767039Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) - FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiafalse
dc.title.none.fl_str_mv Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles
title Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles
spellingShingle Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles
Kiazadeh, Asal
title_short Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles
title_full Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles
title_fullStr Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles
title_full_unstemmed Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles
title_sort Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles
author Kiazadeh, Asal
author_facet Kiazadeh, Asal
Rocha, P. R.
Chen, Q.
Gomes, Henrique L.
author_role author
author2 Rocha, P. R.
Chen, Q.
Gomes, Henrique L.
author2_role author
author
author
dc.contributor.none.fl_str_mv Sapientia
dc.contributor.author.fl_str_mv Kiazadeh, Asal
Rocha, P. R.
Chen, Q.
Gomes, Henrique L.
description It is demonstrated that planar structures based on silver nanoparticleshosted in a polymer matrix show reliable and reproducible switching properties attractive for non-volatile memory applications. These systems can be programmed between a low conductance (off-state) and high conductance (on-state) with an on/off ratio of 3 orders of magnitude, large retention times and good cycle endurance. The planar structure design offers a series of advantages discussed in this contribution, which make it an ideal tool to elucidate the resistive switching phenomena.
publishDate 2011
dc.date.none.fl_str_mv 2011
2011-01-01T00:00:00Z
2015-06-26T14:18:48Z
dc.type.driver.fl_str_mv conference object
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status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10400.1/6646
url http://hdl.handle.net/10400.1/6646
dc.language.iso.fl_str_mv eng
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1868-4238
AUT: HGO00803;
https://dx.doi.org/10.1007/978-3-642-19170-1_65
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