Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductor

Bibliographic Details
Main Author: Rocha, Paulo R. F.
Publication Date: 2012
Other Authors: Kiazadeh, Asal, Chen, Q., Gomes, Henrique L.
Format: Article
Language: eng
Source: Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
Download full: http://hdl.handle.net/10400.1/3314
Summary: Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explained in terms of an equivalent circuit.
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spelling Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductorResistive Random Access Memory (RRAM)SwitchingElectrical BistabilityNon-Volatile MemoryNegative Differential Resistance (NDR)Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explained in terms of an equivalent circuit.SpringerSapientiaRocha, Paulo R. F.Kiazadeh, AsalChen, Q.Gomes, Henrique L.2014-01-09T10:16:10Z20122014-01-02T21:06:14Z2012-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10400.1/3314engAUT: HGO00803;http://dx.doi.org/10.1007/978-3-642-28255-3_59info:eu-repo/semantics/openAccessreponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiainstacron:RCAAP2025-02-18T17:45:33Zoai:sapientia.ualg.pt:10400.1/3314Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireinfo@rcaap.ptopendoar:https://opendoar.ac.uk/repository/71602025-05-28T20:34:34.902265Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) - FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiafalse
dc.title.none.fl_str_mv Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductor
title Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductor
spellingShingle Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductor
Rocha, Paulo R. F.
Resistive Random Access Memory (RRAM)
Switching
Electrical Bistability
Non-Volatile Memory
Negative Differential Resistance (NDR)
title_short Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductor
title_full Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductor
title_fullStr Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductor
title_full_unstemmed Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductor
title_sort Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductor
author Rocha, Paulo R. F.
author_facet Rocha, Paulo R. F.
Kiazadeh, Asal
Chen, Q.
Gomes, Henrique L.
author_role author
author2 Kiazadeh, Asal
Chen, Q.
Gomes, Henrique L.
author2_role author
author
author
dc.contributor.none.fl_str_mv Sapientia
dc.contributor.author.fl_str_mv Rocha, Paulo R. F.
Kiazadeh, Asal
Chen, Q.
Gomes, Henrique L.
dc.subject.por.fl_str_mv Resistive Random Access Memory (RRAM)
Switching
Electrical Bistability
Non-Volatile Memory
Negative Differential Resistance (NDR)
topic Resistive Random Access Memory (RRAM)
Switching
Electrical Bistability
Non-Volatile Memory
Negative Differential Resistance (NDR)
description Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explained in terms of an equivalent circuit.
publishDate 2012
dc.date.none.fl_str_mv 2012
2012-01-01T00:00:00Z
2014-01-09T10:16:10Z
2014-01-02T21:06:14Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10400.1/3314
url http://hdl.handle.net/10400.1/3314
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv AUT: HGO00803;
http://dx.doi.org/10.1007/978-3-642-28255-3_59
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Springer
publisher.none.fl_str_mv Springer
dc.source.none.fl_str_mv reponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
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reponame_str Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
collection Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
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