Intrinsic and extrinsic resistive switching in a planar diode based on silver oxide nanoparticles

Bibliographic Details
Main Author: Kiazadeh, Asal
Publication Date: 2012
Other Authors: Gomes, Henrique L., Rosa da Costa, Ana, Moreira, José, De Leeuw, Dago M., Meskers, S. C. J.
Format: Article
Language: eng
Source: Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
Download full: http://hdl.handle.net/10400.1/2720
Summary: Resistive switching is investigated in thin-film planar diodes using silver oxide nanoparticles capped in a polymer. The conduction channel is directly exposed to the ambient atmosphere. Two types of switching are observed. In air, the hysteresis loop in the current–voltage characteristics is S-shaped. The high conductance state is volatile and unreliable. The switching is mediated by moisture and electrochemistry. In vacuum, the hysteresis loops are symmetric, N-shaped and exhibit a negative differential resistance region. The conductance states are non-volatile with good data retention, programming cycling endurance and large current modulation ratio. The switching is attributed to electroforming of silver oxide clusters.
id RCAP_c2372d89acee09f411dad7bfeeb9b1ca
oai_identifier_str oai:sapientia.ualg.pt:10400.1/2720
network_acronym_str RCAP
network_name_str Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
repository_id_str https://opendoar.ac.uk/repository/7160
spelling Intrinsic and extrinsic resistive switching in a planar diode based on silver oxide nanoparticlesNanoparticlesResistive switchingNon-volatile memoryResistive switching is investigated in thin-film planar diodes using silver oxide nanoparticles capped in a polymer. The conduction channel is directly exposed to the ambient atmosphere. Two types of switching are observed. In air, the hysteresis loop in the current–voltage characteristics is S-shaped. The high conductance state is volatile and unreliable. The switching is mediated by moisture and electrochemistry. In vacuum, the hysteresis loops are symmetric, N-shaped and exhibit a negative differential resistance region. The conductance states are non-volatile with good data retention, programming cycling endurance and large current modulation ratio. The switching is attributed to electroforming of silver oxide clusters.ElsevierSapientiaKiazadeh, AsalGomes, Henrique L.Rosa da Costa, AnaMoreira, JoséDe Leeuw, Dago M.Meskers, S. C. J.2014-11-29T01:30:07Z2012-08-302013-06-06T10:18:18Z2012-08-30T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10400.1/2720eng0040-6090AUT: HGO00803; AMC01695; JMO01545;http://dx.doi.org/10.1016/j.tsf.2012.08.041info:eu-repo/semantics/openAccessreponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiainstacron:RCAAP2025-02-18T17:17:42Zoai:sapientia.ualg.pt:10400.1/2720Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireinfo@rcaap.ptopendoar:https://opendoar.ac.uk/repository/71602025-05-28T20:16:53.320604Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) - FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiafalse
dc.title.none.fl_str_mv Intrinsic and extrinsic resistive switching in a planar diode based on silver oxide nanoparticles
title Intrinsic and extrinsic resistive switching in a planar diode based on silver oxide nanoparticles
spellingShingle Intrinsic and extrinsic resistive switching in a planar diode based on silver oxide nanoparticles
Kiazadeh, Asal
Nanoparticles
Resistive switching
Non-volatile memory
title_short Intrinsic and extrinsic resistive switching in a planar diode based on silver oxide nanoparticles
title_full Intrinsic and extrinsic resistive switching in a planar diode based on silver oxide nanoparticles
title_fullStr Intrinsic and extrinsic resistive switching in a planar diode based on silver oxide nanoparticles
title_full_unstemmed Intrinsic and extrinsic resistive switching in a planar diode based on silver oxide nanoparticles
title_sort Intrinsic and extrinsic resistive switching in a planar diode based on silver oxide nanoparticles
author Kiazadeh, Asal
author_facet Kiazadeh, Asal
Gomes, Henrique L.
Rosa da Costa, Ana
Moreira, José
De Leeuw, Dago M.
Meskers, S. C. J.
author_role author
author2 Gomes, Henrique L.
Rosa da Costa, Ana
Moreira, José
De Leeuw, Dago M.
Meskers, S. C. J.
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Sapientia
dc.contributor.author.fl_str_mv Kiazadeh, Asal
Gomes, Henrique L.
Rosa da Costa, Ana
Moreira, José
De Leeuw, Dago M.
Meskers, S. C. J.
dc.subject.por.fl_str_mv Nanoparticles
Resistive switching
Non-volatile memory
topic Nanoparticles
Resistive switching
Non-volatile memory
description Resistive switching is investigated in thin-film planar diodes using silver oxide nanoparticles capped in a polymer. The conduction channel is directly exposed to the ambient atmosphere. Two types of switching are observed. In air, the hysteresis loop in the current–voltage characteristics is S-shaped. The high conductance state is volatile and unreliable. The switching is mediated by moisture and electrochemistry. In vacuum, the hysteresis loops are symmetric, N-shaped and exhibit a negative differential resistance region. The conductance states are non-volatile with good data retention, programming cycling endurance and large current modulation ratio. The switching is attributed to electroforming of silver oxide clusters.
publishDate 2012
dc.date.none.fl_str_mv 2012-08-30
2012-08-30T00:00:00Z
2013-06-06T10:18:18Z
2014-11-29T01:30:07Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10400.1/2720
url http://hdl.handle.net/10400.1/2720
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 0040-6090
AUT: HGO00803; AMC01695; JMO01545;
http://dx.doi.org/10.1016/j.tsf.2012.08.041
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
instacron:RCAAP
instname_str FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
instacron_str RCAAP
institution RCAAP
reponame_str Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
collection Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
repository.name.fl_str_mv Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) - FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
repository.mail.fl_str_mv info@rcaap.pt
_version_ 1833598582286974976