Electron-phonon scattering in graded quantum dots

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Bibliografski detalji
Glavni autor: Diniz, G. S.
Datum izdanja: 2006
Daljnji autori: Qu, Fanyao, Diniz Neto, Omar de Oliveira, Milla, Augusto Miguel Alcalde
Format: Article
Jezik: eng
Izvor: Repositório Institucional da UnB
Download full: http://repositorio.unb.br/handle/10482/6175
https://dx.doi.org/10.1590/S0103-97332006000300037
Sažetak: Theoretical calculations of electron-phonon scattering rates in GaAs/AlxGa1¡xAs spherical quantum dots have been performed by means of effective mass approximation in the frame of finite element method. The influence of a roughness interface and external magnetic fields are analysed for different scattering rate transition. Our results open interesting channels for electron dephasing times manipulation. Keywords: Theoretical calculations; Electron-phonon scattering; GaAs/AlxGa1¡xAs
Opis
Sažetak:Theoretical calculations of electron-phonon scattering rates in GaAs/AlxGa1¡xAs spherical quantum dots have been performed by means of effective mass approximation in the frame of finite element method. The influence of a roughness interface and external magnetic fields are analysed for different scattering rate transition. Our results open interesting channels for electron dephasing times manipulation. Keywords: Theoretical calculations; Electron-phonon scattering; GaAs/AlxGa1¡xAs