Electron-phonon scattering in graded quantum dots
Guardat en:
| Autor principal: | |
|---|---|
| Data de publicació: | 2006 |
| Altres autors: | , , |
| Format: | Article |
| Idioma: | eng |
| Font: | Repositório Institucional da UnB |
| Download full: | http://repositorio.unb.br/handle/10482/6175 https://dx.doi.org/10.1590/S0103-97332006000300037 |
Sumari: | Theoretical calculations of electron-phonon scattering rates in GaAs/AlxGa1¡xAs spherical quantum dots have been performed by means of effective mass approximation in the frame of finite element method. The influence of a roughness interface and external magnetic fields are analysed for different scattering rate transition. Our results open interesting channels for electron dephasing times manipulation. Keywords: Theoretical calculations; Electron-phonon scattering; GaAs/AlxGa1¡xAs |
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