Effect of non-abrupt doping and interfacial profiles on the carrier sheet density in one-side modulation-doped GaN/AlGaN quantum wells
সংরক্ষণ করুন:
| প্রধান লেখক: | |
|---|---|
| প্রকাশনার তারিখ: | 2009 |
| অন্যান্য লেখক: | , , , |
| বিন্যাস: | Article |
| ভাষা: | eng |
| সম্পদ: | Repositório Institucional da UnB |
| Download full: | http://repositorio.unb.br/handle/10482/6152 |
সংক্ষিপ্ত: | The results of an accurate theoretical study on the effects of non-abrupt doping and interfacial profiles on the electron sheet density in one-side modulation-doped wurtzite GaN/AlGaN single quantum wells at low temperatures are presented. We solve coupled Schr¨odinger and Poisson equations self-consistently via the finite difference method. By employing a proper discretization on a nonuniform grid and taking into account the strong piezoelectric and spontaneous polarization fields exhibited by the wurtzite III-nitride heterostructures, a substantial increase in the 2DEG density is predicted with the increase of the donor diffusion length and the reduction of the spacer thickness. |