Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientation

Bibliographic Details
Main Author: de Andrade, Maria Glória Caño [UNESP]
Publication Date: 2024
Other Authors: Nogueira, Carlos Roberto [UNESP], Júnior, Nilton Graciano [UNESP], Doria, Rodrigo T., Trevisoli, Renan, Simoen, Eddy
Format: Article
Language: eng
Source: Repositório Institucional da UNESP
Download full: http://dx.doi.org/10.1016/j.sse.2023.108807
https://hdl.handle.net/11449/307671
Summary: The performance of AlGaN/GaN High-Electron Mobility Transistors (HEMTs) fabricated on 〈1 1 1〉 silicon substrates has been experimentally investigated, aiming to verify the effect of different channel orientations on the main electrical parameters, such as drain current (ID), threshold voltage, transconductance (gm), and Drain-Induced Barrier Lowering (DIBL). Moreover, the noise Power Spectral Density (PSD) with different channel orientations has also been characterized in linear operation. No noticeable differences on the electrical and noise PSD characteristics have been observed between the GaN channel orientations (0°, 90° and 45°).
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spelling Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientationChannel orientationsElectrical parametersGaN/AlGaN HEMTLow-frequency noiseThe performance of AlGaN/GaN High-Electron Mobility Transistors (HEMTs) fabricated on 〈1 1 1〉 silicon substrates has been experimentally investigated, aiming to verify the effect of different channel orientations on the main electrical parameters, such as drain current (ID), threshold voltage, transconductance (gm), and Drain-Induced Barrier Lowering (DIBL). Moreover, the noise Power Spectral Density (PSD) with different channel orientations has also been characterized in linear operation. No noticeable differences on the electrical and noise PSD characteristics have been observed between the GaN channel orientations (0°, 90° and 45°).São Paulo State University (UNESP) Institute of Science and Technology, Av. 3 de Março, n. 511Centro Universitário FEI Electrical Engineering Department, Av. Humberto de Alencar Castelo Branco, 3972Pontifícia Universidade Católica de São Paulo PUC-SP School of Science and Technology, Rua Marquês de Paranaguá, 111Ghent University, Sint-Pietersnieuwstraat 25, Ost-Flandernimec, Kapeldreef 75São Paulo State University (UNESP) Institute of Science and Technology, Av. 3 de Março, n. 511Universidade Estadual Paulista (UNESP)Electrical Engineering DepartmentSchool of Science and TechnologyGhent Universityimecde Andrade, Maria Glória Caño [UNESP]Nogueira, Carlos Roberto [UNESP]Júnior, Nilton Graciano [UNESP]Doria, Rodrigo T.Trevisoli, RenanSimoen, Eddy2025-04-29T20:10:03Z2024-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1016/j.sse.2023.108807Solid-State Electronics, v. 211.0038-1101https://hdl.handle.net/11449/30767110.1016/j.sse.2023.1088072-s2.0-85176212749Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengSolid-State Electronicsinfo:eu-repo/semantics/openAccess2025-04-30T13:56:31Zoai:repositorio.unesp.br:11449/307671Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestrepositoriounesp@unesp.bropendoar:29462025-04-30T13:56:31Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientation
title Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientation
spellingShingle Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientation
de Andrade, Maria Glória Caño [UNESP]
Channel orientations
Electrical parameters
GaN/AlGaN HEMT
Low-frequency noise
title_short Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientation
title_full Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientation
title_fullStr Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientation
title_full_unstemmed Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientation
title_sort Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientation
author de Andrade, Maria Glória Caño [UNESP]
author_facet de Andrade, Maria Glória Caño [UNESP]
Nogueira, Carlos Roberto [UNESP]
Júnior, Nilton Graciano [UNESP]
Doria, Rodrigo T.
Trevisoli, Renan
Simoen, Eddy
author_role author
author2 Nogueira, Carlos Roberto [UNESP]
Júnior, Nilton Graciano [UNESP]
Doria, Rodrigo T.
Trevisoli, Renan
Simoen, Eddy
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (UNESP)
Electrical Engineering Department
School of Science and Technology
Ghent University
imec
dc.contributor.author.fl_str_mv de Andrade, Maria Glória Caño [UNESP]
Nogueira, Carlos Roberto [UNESP]
Júnior, Nilton Graciano [UNESP]
Doria, Rodrigo T.
Trevisoli, Renan
Simoen, Eddy
dc.subject.por.fl_str_mv Channel orientations
Electrical parameters
GaN/AlGaN HEMT
Low-frequency noise
topic Channel orientations
Electrical parameters
GaN/AlGaN HEMT
Low-frequency noise
description The performance of AlGaN/GaN High-Electron Mobility Transistors (HEMTs) fabricated on 〈1 1 1〉 silicon substrates has been experimentally investigated, aiming to verify the effect of different channel orientations on the main electrical parameters, such as drain current (ID), threshold voltage, transconductance (gm), and Drain-Induced Barrier Lowering (DIBL). Moreover, the noise Power Spectral Density (PSD) with different channel orientations has also been characterized in linear operation. No noticeable differences on the electrical and noise PSD characteristics have been observed between the GaN channel orientations (0°, 90° and 45°).
publishDate 2024
dc.date.none.fl_str_mv 2024-01-01
2025-04-29T20:10:03Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1016/j.sse.2023.108807
Solid-State Electronics, v. 211.
0038-1101
https://hdl.handle.net/11449/307671
10.1016/j.sse.2023.108807
2-s2.0-85176212749
url http://dx.doi.org/10.1016/j.sse.2023.108807
https://hdl.handle.net/11449/307671
identifier_str_mv Solid-State Electronics, v. 211.
0038-1101
10.1016/j.sse.2023.108807
2-s2.0-85176212749
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Solid-State Electronics
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv repositoriounesp@unesp.br
_version_ 1834482895847161856

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