APA Citation

de Andrade, M. G. C. [., Nogueira, C. R. [., Júnior, N. G. [., Doria, R. T., Trevisoli, R., & Simoen, E. (2024). Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientation.

Chicago Style Citation

de Andrade, Maria Glória Caño [UNESP], Carlos Roberto [UNESP] Nogueira, Nilton Graciano [UNESP] Júnior, Rodrigo T. Doria, Renan Trevisoli, and Eddy Simoen. Electrical Parameters and Low-frequency Noise of AlGaN/GaN High-electron Mobility Transistors With Different Channel Orientation. 2024.

MLA Citation

de Andrade, Maria Glória Caño [UNESP], et al. Electrical Parameters and Low-frequency Noise of AlGaN/GaN High-electron Mobility Transistors With Different Channel Orientation. 2024.

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