Tailoring IGZO composition for enhanced fully solution-based thin film transistors

Bibliographic Details
Main Author: Moreira, Marco
Publication Date: 2019
Other Authors: Carlos, Emanuel, Dias, Carlos, Deuermeier, Jonas, Pereira, Maria, Barquinha, Pedro, Branquinho, Rita, Martins, Rodrigo, Fortunato, Elvira
Format: Article
Language: eng
Source: Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
Download full: http://hdl.handle.net/10362/98742
Summary: UID/CTM/50025/2019 H2020 NMP-22-2015 project 1D-NEON Grant Agreement 685758 SFRH/BD/116047/2016 IDS-FunMat-INNO project FPA2016/EIT/EIT Raw Materials Grant Agreement 15015
id RCAP_ae68db00f8b40ce40efd02dba764ee52
oai_identifier_str oai:run.unl.pt:10362/98742
network_acronym_str RCAP
network_name_str Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
repository_id_str https://opendoar.ac.uk/repository/7160
spelling Tailoring IGZO composition for enhanced fully solution-based thin film transistorsIGZO compositionLow voltage operationSolution combustion synthesisTransparent amorphous semiconductor oxidesChemical Engineering(all)Materials Science(all)UID/CTM/50025/2019 H2020 NMP-22-2015 project 1D-NEON Grant Agreement 685758 SFRH/BD/116047/2016 IDS-FunMat-INNO project FPA2016/EIT/EIT Raw Materials Grant Agreement 15015Solution-processed metal oxides have been investigated as an alternative to vacuum-based oxides to implement low-cost, high-performance electronic devices on flexible transparent substrates. However, their electrical properties need to be enhanced to apply at industrial scale. Amorphous indium-gallium-zinc oxide (a-IGZO) is the most-used transparent semiconductor metal oxide as an active channel layer in thin-film transistors (TFTs), due to its superior electrical properties. The present work evaluates the influence of composition, thickness and ageing on the electrical properties of solution a-IGZO TFTs, using solution combustion synthesis method, with urea as fuel. After optimizing the semiconductor properties, low-voltage TFTs were obtained by implementing a back-surface passivated 3-layer In:Ga:Zn 3:1:1 with a solution-processed high-k dielectric; AlOx. The devices show saturation mobility of 3.2 cm2 V-1 s-1, IOn/IOff of 106, SS of 73 mV dec-1 and VOn of 0.18 V, thus demonstrating promising features for low-cost circuit applications.DCM - Departamento de Ciência dos MateriaisCENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)UNINOVA-Instituto de Desenvolvimento de Novas TecnologiasRUNMoreira, MarcoCarlos, EmanuelDias, CarlosDeuermeier, JonasPereira, MariaBarquinha, PedroBranquinho, RitaMartins, RodrigoFortunato, Elvira2020-06-03T00:50:30Z2019-09-012019-09-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10362/98742eng2079-4991PURE: 15978009https://doi.org/10.3390/nano9091273info:eu-repo/semantics/openAccessreponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiainstacron:RCAAP2024-05-22T17:45:47Zoai:run.unl.pt:10362/98742Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireinfo@rcaap.ptopendoar:https://opendoar.ac.uk/repository/71602025-05-28T17:17:10.727998Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) - FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiafalse
dc.title.none.fl_str_mv Tailoring IGZO composition for enhanced fully solution-based thin film transistors
title Tailoring IGZO composition for enhanced fully solution-based thin film transistors
spellingShingle Tailoring IGZO composition for enhanced fully solution-based thin film transistors
Moreira, Marco
IGZO composition
Low voltage operation
Solution combustion synthesis
Transparent amorphous semiconductor oxides
Chemical Engineering(all)
Materials Science(all)
title_short Tailoring IGZO composition for enhanced fully solution-based thin film transistors
title_full Tailoring IGZO composition for enhanced fully solution-based thin film transistors
title_fullStr Tailoring IGZO composition for enhanced fully solution-based thin film transistors
title_full_unstemmed Tailoring IGZO composition for enhanced fully solution-based thin film transistors
title_sort Tailoring IGZO composition for enhanced fully solution-based thin film transistors
author Moreira, Marco
author_facet Moreira, Marco
Carlos, Emanuel
Dias, Carlos
Deuermeier, Jonas
Pereira, Maria
Barquinha, Pedro
Branquinho, Rita
Martins, Rodrigo
Fortunato, Elvira
author_role author
author2 Carlos, Emanuel
Dias, Carlos
Deuermeier, Jonas
Pereira, Maria
Barquinha, Pedro
Branquinho, Rita
Martins, Rodrigo
Fortunato, Elvira
author2_role author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv DCM - Departamento de Ciência dos Materiais
CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)
UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias
RUN
dc.contributor.author.fl_str_mv Moreira, Marco
Carlos, Emanuel
Dias, Carlos
Deuermeier, Jonas
Pereira, Maria
Barquinha, Pedro
Branquinho, Rita
Martins, Rodrigo
Fortunato, Elvira
dc.subject.por.fl_str_mv IGZO composition
Low voltage operation
Solution combustion synthesis
Transparent amorphous semiconductor oxides
Chemical Engineering(all)
Materials Science(all)
topic IGZO composition
Low voltage operation
Solution combustion synthesis
Transparent amorphous semiconductor oxides
Chemical Engineering(all)
Materials Science(all)
description UID/CTM/50025/2019 H2020 NMP-22-2015 project 1D-NEON Grant Agreement 685758 SFRH/BD/116047/2016 IDS-FunMat-INNO project FPA2016/EIT/EIT Raw Materials Grant Agreement 15015
publishDate 2019
dc.date.none.fl_str_mv 2019-09-01
2019-09-01T00:00:00Z
2020-06-03T00:50:30Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10362/98742
url http://hdl.handle.net/10362/98742
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2079-4991
PURE: 15978009
https://doi.org/10.3390/nano9091273
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
instacron:RCAAP
instname_str FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
instacron_str RCAAP
institution RCAAP
reponame_str Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
collection Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
repository.name.fl_str_mv Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) - FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
repository.mail.fl_str_mv info@rcaap.pt
_version_ 1833596579448094720

Similar Items