Propriedades eletrônicas de nanofios de SI-GE com sequenciamento de Fibonacci e radômico

Detalhes bibliográficos
Ano de defesa: 2012
Autor(a) principal: CORTEZ, André Hadad lattes
Orientador(a): AZEVEDO, David Lima
Banca de defesa: Não Informado pela instituição
Tipo de documento: Dissertação
Tipo de acesso: Acesso aberto
Idioma: por
Instituição de defesa: Universidade Federal do Maranhão
Programa de Pós-Graduação: PROGRAMA DE PÓS-GRADUAÇÃO EM FÍSICA/CCET
Departamento: DEPARTAMENTO DE FÍSICA/CCET
País: Brasil
Palavras-chave em Português:
Palavras-chave em Inglês:
Área do conhecimento CNPq:
Link de acesso: http://tedebc.ufma.br:8080/jspui/handle/tede/1857
Resumo: In this work we address a theoretical calculation of the electronic spectra in Si-Ge atomic chain that is arranged in a Fibonacci quasi-periodic sequence, by using semi-empirical quantum method based on Hückel extended model. We apply the Fibonacci substitutional sequences in the atomic building blocks A(Si) and B(Ge) through the in ation rule or recursion relation. In our ab initio calculations we use only a single point which is the sufi cient condition to consider all the orbitals and charge distribution across the entire system. Although the calculations presented here are more complete than the models adopted in the literature which take into account the electronic interaction, up to the second and third neighbors, an interesting property remains in their electronic spectra: the fractality (which is the main signature of this kind of system). We discuss this fractality of the spectra and we compare them with the randomic arrangement of Si-Ge atomic chain, and with previous results based on the tight-binding approximation of Schorödinger equation considering until the nearest neighbor.