Propriedades eletrônicas de nanofios semicondutores de Fosfeto de Zinco (Zn3P2)

• Ano de defesa: 2018
• Autor(a) principal: Lombardi, Gustavo Aparecido
• Orientador(a): Chiquito, Adenilson José
• Tipo de documento: Dissertação
• Tipo de acesso: Acesso aberto
• Idioma: por
• Instituição de defesa: Universidade Federal de São Carlos; Câmpus São Carlos
• Programa de Pós-Graduação: Programa de Pós-Graduação em Física - PPGF
• Palavras-chave em Português: Nanofios; Semicondutores; Transporte eletrônico; Fosfeto de Zinco
• Palavras-chave em Inglês: Nanowires; Semiconductors; Electronic transport; Zinc phosphide
• Área do conhecimento CNPq: CIENCIAS EXATAS E DA TERRA::FISICA::FISICA DA MATERIA CONDENSADA
• Link de acesso: https://repositorio.ufscar.br/handle/20.500.14289/10116

Zinc phosphide Zn3P2 nanowires with excellent crystalline quality were grown using the Vapor-Liquid-Solid (VLS) method with gold nanoparticles as catalysts. Single nanowire based devices were fabricated with ohmic nickel contacts. Thermally activated and variable range hopping mechanisms were simultaneously identified from temperature dependent transport measurements, with the later being dominant. Energy levels at 197 meV , 47 meV and 15meV associated to Zn vacancies and interstitial P atoms were identified. Hopping radius were found to be 58 nm for 300 K. These results show how the presence of some degree of disorder drastically affects the transport of current through the nanowire. Photocurrent measurements revealed the material potential as light sensors. Current gains as high as 400% and 660% were measured for white light and 660 nm laser, respectively.