Detalhes bibliográficos
Ano de defesa: |
1997 |
Autor(a) principal: |
Feijão, Márcio Luis Ximenes |
Orientador(a): |
Não Informado pela instituição |
Banca de defesa: |
Não Informado pela instituição |
Tipo de documento: |
Dissertação
|
Tipo de acesso: |
Acesso aberto |
Idioma: |
por |
Instituição de defesa: |
Não Informado pela instituição
|
Programa de Pós-Graduação: |
Não Informado pela instituição
|
Departamento: |
Não Informado pela instituição
|
País: |
Não Informado pela instituição
|
Palavras-chave em Português: |
|
Link de acesso: |
http://www.repositorio.ufc.br/handle/riufc/63879
|
Resumo: |
ln this work we investigate the effects of an applied transverse magnetic field in the growth direction of the GaAs/AlxGa1-xAs heterostructures (in particular heterojunctions, single and double barriers) in the transmission properties of electrons, considering both abrupt and non-abrupt interfaces. The interfaces were described by a model in which the potential and carriers effective mass 'depends on the interfacial variation of the aluminum molar fraction. The carriers effective mass have spatial dependence in the interfaces, therefore the transmission properties in heterojunctions, single barriers, and double barriers of GaAs/AlxGa1-xAs are numerically calculatecl. We used the multsteps method, and the Schroedinger equations that merge from the position dependent energy kinetic operator p ̂[m(z) -1p ̂}/2. We verified that the magnetic field shifts the transmissions curves to high energy regions for heterostructures GaAs/AlxGa1-xAs in the abrupt and nonabrupt interface abrupt. ln addition, the well known nonabrupt interface effects are altered by magnetic field when we study heterojunctions and single barriers of GaAs/AlxGa1-xAs. Considering double barriers of GaAs/AlxGa1-xAs, in the presence of a magnetic field, the assimetry of barriers is responsible for shifts in the resonances of the transmission coefficient. |