Detalhes bibliográficos
| Ano de defesa: |
2015 |
| Autor(a) principal: |
Coutinho, Daniel Augusto Krieger
 |
| Orientador(a): |
Zanesco, Izete
|
| Banca de defesa: |
Não Informado pela instituição |
| Tipo de documento: |
Dissertação
|
| Tipo de acesso: |
Acesso aberto |
| Idioma: |
por |
| Instituição de defesa: |
Pontifícia Universidade Católica do Rio Grande do Sul
|
| Programa de Pós-Graduação: |
Programa de Pós-Graduação em Engenharia e Tecnologia de Materiais
|
| Departamento: |
Faculdade de Engenharia
|
| País: |
BR
|
| Palavras-chave em Português: |
|
| Área do conhecimento CNPq: |
|
| Link de acesso: |
http://tede2.pucrs.br/tede2/handle/tede/3275
|
Resumo: |
This work was focused on the development of silicon solar cells with laser fired contacts and rear face passivation. Several processes were developed based on two different p-type silicon substrates. The objective was to develop a solar cell manufacturing process with laser fired contacts and aluminum deposited by evaporation, as well as to assess the rear passivation. In Si-Cz wafers, the phosphorus diffusion was performed at 865 °C. From the power and the frequency experimental optimization in Si-Cz wafers, it was found that the efficiency of 13.1 % was obtained with 15 W of power and 80 kHz of frequency. The efficiency of 14.5 % was achieved from the annealing temperature of 350 °C and belt speed of 66 cm/min. The experimental optimization of the distance between the dots and the contact area of the dots resulted on 14.1 % efficiency, for the distance between dots of 0.5 mm and the dot area contact of 7230 μm2. For the PV-Si-FZ substract, with the best diffusion temperature of 875 °C, the efficiency of 14.0 % was obtained. It was found that the efficiency for Si-Cz and Si-FZ solar cell was similar, due to the low minority charge carrier lifetime. The deposition of a TiO2 film on the rear side resulted in an increase of the fill factor and efficiency, however the increase of the silicon oxide layer reduced the efficiency of the devices |
