Detalhes bibliográficos
| Ano de defesa: |
2017 |
| Autor(a) principal: |
Razera, Ricardo Augusto Zanotto
 |
| Orientador(a): |
Moehlecke, Adriano
|
| Banca de defesa: |
Não Informado pela instituição |
| Tipo de documento: |
Dissertação
|
| Tipo de acesso: |
Acesso aberto |
| Idioma: |
por |
| Instituição de defesa: |
Pontifícia Universidade Católica do Rio Grande do Sul
|
| Programa de Pós-Graduação: |
Programa de Pós-Graduação em Engenharia e Tecnologia de Materiais
|
| Departamento: |
Faculdade de Engenharia
|
| País: |
Brasil
|
| Palavras-chave em Português: |
|
| Área do conhecimento CNPq: |
|
| Link de acesso: |
http://tede2.pucrs.br/tede2/handle/tede/7164
|
Resumo: |
The passivation of silicon solar cell surfaces is important for reducing the recombination rate of electron-hole pairs and, consequently, for improving efficiency. The goal of this work was to analyze the passivation quality obtained with thermal oxidation of solar grade silicon wafers and of solar cells with type p base and selective back surface field, producing thin films of SiO2. First, the dependence of minority carrier lifetime on oxidation time and temperature with and without the addition of chlorine was analyzed. I-V curves and spectral response measurements were conducted to determine the influence of oxidation parameters on the solar cells electrical characteristics. The results related to the oxidation furnace cleaning showed that introducing chlorine during oxidation it was possible to avoid the decline of minority carrier lifetime for silicon of Czochralski type and temperatures higher than 1000 °C. As regarded to the oxide passivation, it was observed that the effective minority carrier lifetime increases for thicker oxides. The oxidation time and temperature that resulted in the highest efficiencies were 45 min and 800 °C, resulting in oxide thicknesses on the front and back surfaces of 53 nm and 10 nm, respectively. The best solar cell with selective back surface field and SiO2 passivation presented Jsc = 36.0 mA/cm2, Voc = 598.6 mV and FF = 0.777, corresponding to an efficiency of 16.8 %. |
