a-b axis-oriented lanthanum doped Bi4Ti3O12 thin films grown on a TiO2 buffer layer

Bibliographic Details
Main Author: Simoes, A. Z.
Publication Date: 2006
Other Authors: Pianno, R. F. C., Ries, A., Varela, José Arana [UNESP], Longo, Elson [UNESP]
Format: Article
Language: eng
Source: Repositório Institucional da UNESP
Download full: http://dx.doi.org/10.1063/1.2356096
http://hdl.handle.net/11449/37807
Summary: a-b axis-oriented, lanthanum doped Bi4Ti3O12 (BLT) thin films with a TiO2 rutile buffer layer deposited on Pt/Ti/SiO2/Si substrates were grown by the soft chemical method. Butterfly dielectric behavior has been achieved and can be ascribed to the ferroelectric domain switching. The remanent polarization and the coercive voltage for the film deposited on TiO2 buffer layer were 22.2 mu C/cm(2) and 1.8 V, respectively. Random-oriented BLT films showed a reduction in switching polarization when compared to the a-b axis-oriented films. Due to the excellent physical properties, these films are a promising candidate for use in lead-free applications in ferroelectric devices. (c) 2006 American Institute of Physics.
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spelling a-b axis-oriented lanthanum doped Bi4Ti3O12 thin films grown on a TiO2 buffer layera-b axis-oriented, lanthanum doped Bi4Ti3O12 (BLT) thin films with a TiO2 rutile buffer layer deposited on Pt/Ti/SiO2/Si substrates were grown by the soft chemical method. Butterfly dielectric behavior has been achieved and can be ascribed to the ferroelectric domain switching. The remanent polarization and the coercive voltage for the film deposited on TiO2 buffer layer were 22.2 mu C/cm(2) and 1.8 V, respectively. Random-oriented BLT films showed a reduction in switching polarization when compared to the a-b axis-oriented films. Due to the excellent physical properties, these films are a promising candidate for use in lead-free applications in ferroelectric devices. (c) 2006 American Institute of Physics.UNESP, Dept Quim, BR-14801970 São Paulo, BrazilUNESP, Dept Quim, BR-14801970 São Paulo, BrazilAmerican Institute of Physics (AIP)Universidade Estadual Paulista (Unesp)Simoes, A. Z.Pianno, R. F. C.Ries, A.Varela, José Arana [UNESP]Longo, Elson [UNESP]2014-05-20T15:27:53Z2014-05-20T15:27:53Z2006-10-15info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article3application/pdfhttp://dx.doi.org/10.1063/1.2356096Journal of Applied Physics. Melville: Amer Inst Physics, v. 100, n. 8, 3 p., 2006.0021-8979http://hdl.handle.net/11449/3780710.1063/1.2356096WOS:000241721900068WOS000241721900068.pdfWeb of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal of Applied Physics2.1760,739info:eu-repo/semantics/openAccess2025-05-28T06:19:37Zoai:repositorio.unesp.br:11449/37807Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestrepositoriounesp@unesp.bropendoar:29462025-05-28T06:19:37Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv a-b axis-oriented lanthanum doped Bi4Ti3O12 thin films grown on a TiO2 buffer layer
title a-b axis-oriented lanthanum doped Bi4Ti3O12 thin films grown on a TiO2 buffer layer
spellingShingle a-b axis-oriented lanthanum doped Bi4Ti3O12 thin films grown on a TiO2 buffer layer
Simoes, A. Z.
title_short a-b axis-oriented lanthanum doped Bi4Ti3O12 thin films grown on a TiO2 buffer layer
title_full a-b axis-oriented lanthanum doped Bi4Ti3O12 thin films grown on a TiO2 buffer layer
title_fullStr a-b axis-oriented lanthanum doped Bi4Ti3O12 thin films grown on a TiO2 buffer layer
title_full_unstemmed a-b axis-oriented lanthanum doped Bi4Ti3O12 thin films grown on a TiO2 buffer layer
title_sort a-b axis-oriented lanthanum doped Bi4Ti3O12 thin films grown on a TiO2 buffer layer
author Simoes, A. Z.
author_facet Simoes, A. Z.
Pianno, R. F. C.
Ries, A.
Varela, José Arana [UNESP]
Longo, Elson [UNESP]
author_role author
author2 Pianno, R. F. C.
Ries, A.
Varela, José Arana [UNESP]
Longo, Elson [UNESP]
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Simoes, A. Z.
Pianno, R. F. C.
Ries, A.
Varela, José Arana [UNESP]
Longo, Elson [UNESP]
description a-b axis-oriented, lanthanum doped Bi4Ti3O12 (BLT) thin films with a TiO2 rutile buffer layer deposited on Pt/Ti/SiO2/Si substrates were grown by the soft chemical method. Butterfly dielectric behavior has been achieved and can be ascribed to the ferroelectric domain switching. The remanent polarization and the coercive voltage for the film deposited on TiO2 buffer layer were 22.2 mu C/cm(2) and 1.8 V, respectively. Random-oriented BLT films showed a reduction in switching polarization when compared to the a-b axis-oriented films. Due to the excellent physical properties, these films are a promising candidate for use in lead-free applications in ferroelectric devices. (c) 2006 American Institute of Physics.
publishDate 2006
dc.date.none.fl_str_mv 2006-10-15
2014-05-20T15:27:53Z
2014-05-20T15:27:53Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1063/1.2356096
Journal of Applied Physics. Melville: Amer Inst Physics, v. 100, n. 8, 3 p., 2006.
0021-8979
http://hdl.handle.net/11449/37807
10.1063/1.2356096
WOS:000241721900068
WOS000241721900068.pdf
url http://dx.doi.org/10.1063/1.2356096
http://hdl.handle.net/11449/37807
identifier_str_mv Journal of Applied Physics. Melville: Amer Inst Physics, v. 100, n. 8, 3 p., 2006.
0021-8979
10.1063/1.2356096
WOS:000241721900068
WOS000241721900068.pdf
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Journal of Applied Physics
2.176
0,739
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 3
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics (AIP)
publisher.none.fl_str_mv American Institute of Physics (AIP)
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv repositoriounesp@unesp.br
_version_ 1834482697433513984

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