Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors

• Main Author: Glória Caño de Andrade, Maria [UNESP]
• Publication Date: 2021
• Other Authors: Felipe de Oliveira Bergamim, Luis [UNESP], Baptista Júnior, Braz [UNESP], Roberto Nogueira, Carlos [UNESP], Alex da Silva, Fábio [UNESP], Takakura, Kenichiro, Parvais, Bertrand, Simoen, Eddy
• Format: Article
• Language: eng
• Source: Repositório Institucional da UNESP
• Download full: http://dx.doi.org/10.1016/j.sse.2021.108050; http://hdl.handle.net/11449/221845
• topic: GaN/AlGaN; HEMT; High-temperature; Low-frequency noise

In this paper, the noise Power Spectral Density (PSD) of AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) has been experimentally investigated in linear operation (VD = 50 mV) for different channel lengths (L) and widths (W) at different temperatures (5.32 °C till 100 °C). The origin of the noise will be analyzed to understand the physical mechanisms involved. It is shown that the Low-Frequency (LF) noise is dominated by 1/f noise, originating from number fluctuations. Additionally, in shorter devices, a higher 1/f noise PSD is found. The LF noise characteristics indicate that the AlGaN/GaN HEMTs on silicon substrates can be a promising candidate for analog and Radio Frequency applications (RF).