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Fatigue endurance and leakage characteristics of ferroelectric BaBiO₃ thin films obtained by the polymeric precursor method

Bibliographic Details
Main Author: Acero, G. [UNESP]
Publication Date: 2025
Other Authors: Flores, E. M., Ramirez, M. A. [UNESP], Moreno, H., Ortega, P. P., Aguiar, E. C., Simões, A. Z. [UNESP]
Format: Article
Language: eng
Source: Repositório Institucional da UNESP
Download full: http://dx.doi.org/10.1016/j.jallcom.2024.178341
https://hdl.handle.net/11449/304100
Summary: This study describes a straightforward synthesis route for producing barium bismuthate (BaBiO3) thin films via the polymeric precursor method. The research investigates the temperature-dependent characteristics of fatigue resistance and leakage behavior. The findings emphasize the crucial role of annealing temperature in influencing crystallization, morphology, fatigue resistance, and leakage current. Morphological analysis reveals distinct film structures influenced by annealing temperature. Specifically, the film annealed at 600°C exhibits higher remnant polarization (19.87 μC/cm2) compared to the film annealed at 800°C (8.41 μC/cm2). This behavior can be attributed to the small grain size, which enhances boundary effects and the contributions of domain walls. The 800°C annealed film exhibits a plate-like grain structure, with leakage current characteristics consistent with the traps-filled limit voltage (VTFL)-mechanism. In contrast, the film annealed at 600°C displays rounded grains and its high-field conduction behavior is well described by the space-charge-limited conduction (SCL) mechanism. Furthermore, the film annealed at 600°C demonstrates better fatigue resistance, sustaining up to 108 switching cycles without degradation. These results position it as a promising candidate for actuators, switches, and emerging electronic memory device applications. In conclusion, this study highlights the significance of annealing temperature in tailoring the properties of BaBiO3 thin films, providing valuable insights for optimizing their performance across various technological applications.
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spelling Fatigue endurance and leakage characteristics of ferroelectric BaBiO₃ thin films obtained by the polymeric precursor methodBaBiO3FatigueLeakage currentPolymeric precursor methodThin filmsThis study describes a straightforward synthesis route for producing barium bismuthate (BaBiO3) thin films via the polymeric precursor method. The research investigates the temperature-dependent characteristics of fatigue resistance and leakage behavior. The findings emphasize the crucial role of annealing temperature in influencing crystallization, morphology, fatigue resistance, and leakage current. Morphological analysis reveals distinct film structures influenced by annealing temperature. Specifically, the film annealed at 600°C exhibits higher remnant polarization (19.87 μC/cm2) compared to the film annealed at 800°C (8.41 μC/cm2). This behavior can be attributed to the small grain size, which enhances boundary effects and the contributions of domain walls. The 800°C annealed film exhibits a plate-like grain structure, with leakage current characteristics consistent with the traps-filled limit voltage (VTFL)-mechanism. In contrast, the film annealed at 600°C displays rounded grains and its high-field conduction behavior is well described by the space-charge-limited conduction (SCL) mechanism. Furthermore, the film annealed at 600°C demonstrates better fatigue resistance, sustaining up to 108 switching cycles without degradation. These results position it as a promising candidate for actuators, switches, and emerging electronic memory device applications. In conclusion, this study highlights the significance of annealing temperature in tailoring the properties of BaBiO3 thin films, providing valuable insights for optimizing their performance across various technological applications.School of Engineering and Sciences Guaratinguetá São Paulo State University – UNESP, SPFederal University of São Carlos (UFSCar), SPState University of Mato Grosso do Sul (UEMS) Materials Research Center, MSDepartment of Physics Jorge Basadre Grohmann National UniversitySchool of Engineering and Sciences Guaratinguetá São Paulo State University – UNESP, SPUniversidade Estadual Paulista (UNESP)Universidade Federal de São Carlos (UFSCar)Universidade Estadual de Mato Grosso do Sul (UEMS)Jorge Basadre Grohmann National UniversityAcero, G. [UNESP]Flores, E. M.Ramirez, M. A. [UNESP]Moreno, H.Ortega, P. P.Aguiar, E. C.Simões, A. Z. [UNESP]2025-04-29T19:33:52Z2025-01-15info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1016/j.jallcom.2024.178341Journal of Alloys and Compounds, v. 1011.0925-8388https://hdl.handle.net/11449/30410010.1016/j.jallcom.2024.1783412-s2.0-85213963465Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal of Alloys and Compoundsinfo:eu-repo/semantics/openAccess2025-04-30T14:24:40Zoai:repositorio.unesp.br:11449/304100Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestrepositoriounesp@unesp.bropendoar:29462025-04-30T14:24:40Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Fatigue endurance and leakage characteristics of ferroelectric BaBiO₃ thin films obtained by the polymeric precursor method
title Fatigue endurance and leakage characteristics of ferroelectric BaBiO₃ thin films obtained by the polymeric precursor method
spellingShingle Fatigue endurance and leakage characteristics of ferroelectric BaBiO₃ thin films obtained by the polymeric precursor method
Acero, G. [UNESP]
BaBiO3
Fatigue
Leakage current
Polymeric precursor method
Thin films
title_short Fatigue endurance and leakage characteristics of ferroelectric BaBiO₃ thin films obtained by the polymeric precursor method
title_full Fatigue endurance and leakage characteristics of ferroelectric BaBiO₃ thin films obtained by the polymeric precursor method
title_fullStr Fatigue endurance and leakage characteristics of ferroelectric BaBiO₃ thin films obtained by the polymeric precursor method
title_full_unstemmed Fatigue endurance and leakage characteristics of ferroelectric BaBiO₃ thin films obtained by the polymeric precursor method
title_sort Fatigue endurance and leakage characteristics of ferroelectric BaBiO₃ thin films obtained by the polymeric precursor method
author Acero, G. [UNESP]
author_facet Acero, G. [UNESP]
Flores, E. M.
Ramirez, M. A. [UNESP]
Moreno, H.
Ortega, P. P.
Aguiar, E. C.
Simões, A. Z. [UNESP]
author_role author
author2 Flores, E. M.
Ramirez, M. A. [UNESP]
Moreno, H.
Ortega, P. P.
Aguiar, E. C.
Simões, A. Z. [UNESP]
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (UNESP)
Universidade Federal de São Carlos (UFSCar)
Universidade Estadual de Mato Grosso do Sul (UEMS)
Jorge Basadre Grohmann National University
dc.contributor.author.fl_str_mv Acero, G. [UNESP]
Flores, E. M.
Ramirez, M. A. [UNESP]
Moreno, H.
Ortega, P. P.
Aguiar, E. C.
Simões, A. Z. [UNESP]
dc.subject.por.fl_str_mv BaBiO3
Fatigue
Leakage current
Polymeric precursor method
Thin films
topic BaBiO3
Fatigue
Leakage current
Polymeric precursor method
Thin films
description This study describes a straightforward synthesis route for producing barium bismuthate (BaBiO3) thin films via the polymeric precursor method. The research investigates the temperature-dependent characteristics of fatigue resistance and leakage behavior. The findings emphasize the crucial role of annealing temperature in influencing crystallization, morphology, fatigue resistance, and leakage current. Morphological analysis reveals distinct film structures influenced by annealing temperature. Specifically, the film annealed at 600°C exhibits higher remnant polarization (19.87 μC/cm2) compared to the film annealed at 800°C (8.41 μC/cm2). This behavior can be attributed to the small grain size, which enhances boundary effects and the contributions of domain walls. The 800°C annealed film exhibits a plate-like grain structure, with leakage current characteristics consistent with the traps-filled limit voltage (VTFL)-mechanism. In contrast, the film annealed at 600°C displays rounded grains and its high-field conduction behavior is well described by the space-charge-limited conduction (SCL) mechanism. Furthermore, the film annealed at 600°C demonstrates better fatigue resistance, sustaining up to 108 switching cycles without degradation. These results position it as a promising candidate for actuators, switches, and emerging electronic memory device applications. In conclusion, this study highlights the significance of annealing temperature in tailoring the properties of BaBiO3 thin films, providing valuable insights for optimizing their performance across various technological applications.
publishDate 2025
dc.date.none.fl_str_mv 2025-04-29T19:33:52Z
2025-01-15
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1016/j.jallcom.2024.178341
Journal of Alloys and Compounds, v. 1011.
0925-8388
https://hdl.handle.net/11449/304100
10.1016/j.jallcom.2024.178341
2-s2.0-85213963465
url http://dx.doi.org/10.1016/j.jallcom.2024.178341
https://hdl.handle.net/11449/304100
identifier_str_mv Journal of Alloys and Compounds, v. 1011.
0925-8388
10.1016/j.jallcom.2024.178341
2-s2.0-85213963465
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Journal of Alloys and Compounds
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv repositoriounesp@unesp.br
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