Fatigue endurance and leakage characteristics of ferroelectric BaBiO₃ thin films obtained by the polymeric precursor method
Main Author: | |
---|---|
Publication Date: | 2025 |
Other Authors: | , , , , , |
Format: | Article |
Language: | eng |
Source: | Repositório Institucional da UNESP |
Download full: | http://dx.doi.org/10.1016/j.jallcom.2024.178341 https://hdl.handle.net/11449/304100 |
Summary: | This study describes a straightforward synthesis route for producing barium bismuthate (BaBiO3) thin films via the polymeric precursor method. The research investigates the temperature-dependent characteristics of fatigue resistance and leakage behavior. The findings emphasize the crucial role of annealing temperature in influencing crystallization, morphology, fatigue resistance, and leakage current. Morphological analysis reveals distinct film structures influenced by annealing temperature. Specifically, the film annealed at 600°C exhibits higher remnant polarization (19.87 μC/cm2) compared to the film annealed at 800°C (8.41 μC/cm2). This behavior can be attributed to the small grain size, which enhances boundary effects and the contributions of domain walls. The 800°C annealed film exhibits a plate-like grain structure, with leakage current characteristics consistent with the traps-filled limit voltage (VTFL)-mechanism. In contrast, the film annealed at 600°C displays rounded grains and its high-field conduction behavior is well described by the space-charge-limited conduction (SCL) mechanism. Furthermore, the film annealed at 600°C demonstrates better fatigue resistance, sustaining up to 108 switching cycles without degradation. These results position it as a promising candidate for actuators, switches, and emerging electronic memory device applications. In conclusion, this study highlights the significance of annealing temperature in tailoring the properties of BaBiO3 thin films, providing valuable insights for optimizing their performance across various technological applications. |
id |
UNSP_8a992df2e56cae3832a7dbb540578730 |
---|---|
oai_identifier_str |
oai:repositorio.unesp.br:11449/304100 |
network_acronym_str |
UNSP |
network_name_str |
Repositório Institucional da UNESP |
repository_id_str |
2946 |
spelling |
Fatigue endurance and leakage characteristics of ferroelectric BaBiO₃ thin films obtained by the polymeric precursor methodBaBiO3FatigueLeakage currentPolymeric precursor methodThin filmsThis study describes a straightforward synthesis route for producing barium bismuthate (BaBiO3) thin films via the polymeric precursor method. The research investigates the temperature-dependent characteristics of fatigue resistance and leakage behavior. The findings emphasize the crucial role of annealing temperature in influencing crystallization, morphology, fatigue resistance, and leakage current. Morphological analysis reveals distinct film structures influenced by annealing temperature. Specifically, the film annealed at 600°C exhibits higher remnant polarization (19.87 μC/cm2) compared to the film annealed at 800°C (8.41 μC/cm2). This behavior can be attributed to the small grain size, which enhances boundary effects and the contributions of domain walls. The 800°C annealed film exhibits a plate-like grain structure, with leakage current characteristics consistent with the traps-filled limit voltage (VTFL)-mechanism. In contrast, the film annealed at 600°C displays rounded grains and its high-field conduction behavior is well described by the space-charge-limited conduction (SCL) mechanism. Furthermore, the film annealed at 600°C demonstrates better fatigue resistance, sustaining up to 108 switching cycles without degradation. These results position it as a promising candidate for actuators, switches, and emerging electronic memory device applications. In conclusion, this study highlights the significance of annealing temperature in tailoring the properties of BaBiO3 thin films, providing valuable insights for optimizing their performance across various technological applications.School of Engineering and Sciences Guaratinguetá São Paulo State University – UNESP, SPFederal University of São Carlos (UFSCar), SPState University of Mato Grosso do Sul (UEMS) Materials Research Center, MSDepartment of Physics Jorge Basadre Grohmann National UniversitySchool of Engineering and Sciences Guaratinguetá São Paulo State University – UNESP, SPUniversidade Estadual Paulista (UNESP)Universidade Federal de São Carlos (UFSCar)Universidade Estadual de Mato Grosso do Sul (UEMS)Jorge Basadre Grohmann National UniversityAcero, G. [UNESP]Flores, E. M.Ramirez, M. A. [UNESP]Moreno, H.Ortega, P. P.Aguiar, E. C.Simões, A. Z. [UNESP]2025-04-29T19:33:52Z2025-01-15info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1016/j.jallcom.2024.178341Journal of Alloys and Compounds, v. 1011.0925-8388https://hdl.handle.net/11449/30410010.1016/j.jallcom.2024.1783412-s2.0-85213963465Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal of Alloys and Compoundsinfo:eu-repo/semantics/openAccess2025-04-30T14:24:40Zoai:repositorio.unesp.br:11449/304100Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestrepositoriounesp@unesp.bropendoar:29462025-04-30T14:24:40Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Fatigue endurance and leakage characteristics of ferroelectric BaBiO₃ thin films obtained by the polymeric precursor method |
title |
Fatigue endurance and leakage characteristics of ferroelectric BaBiO₃ thin films obtained by the polymeric precursor method |
spellingShingle |
Fatigue endurance and leakage characteristics of ferroelectric BaBiO₃ thin films obtained by the polymeric precursor method Acero, G. [UNESP] BaBiO3 Fatigue Leakage current Polymeric precursor method Thin films |
title_short |
Fatigue endurance and leakage characteristics of ferroelectric BaBiO₃ thin films obtained by the polymeric precursor method |
title_full |
Fatigue endurance and leakage characteristics of ferroelectric BaBiO₃ thin films obtained by the polymeric precursor method |
title_fullStr |
Fatigue endurance and leakage characteristics of ferroelectric BaBiO₃ thin films obtained by the polymeric precursor method |
title_full_unstemmed |
Fatigue endurance and leakage characteristics of ferroelectric BaBiO₃ thin films obtained by the polymeric precursor method |
title_sort |
Fatigue endurance and leakage characteristics of ferroelectric BaBiO₃ thin films obtained by the polymeric precursor method |
author |
Acero, G. [UNESP] |
author_facet |
Acero, G. [UNESP] Flores, E. M. Ramirez, M. A. [UNESP] Moreno, H. Ortega, P. P. Aguiar, E. C. Simões, A. Z. [UNESP] |
author_role |
author |
author2 |
Flores, E. M. Ramirez, M. A. [UNESP] Moreno, H. Ortega, P. P. Aguiar, E. C. Simões, A. Z. [UNESP] |
author2_role |
author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (UNESP) Universidade Federal de São Carlos (UFSCar) Universidade Estadual de Mato Grosso do Sul (UEMS) Jorge Basadre Grohmann National University |
dc.contributor.author.fl_str_mv |
Acero, G. [UNESP] Flores, E. M. Ramirez, M. A. [UNESP] Moreno, H. Ortega, P. P. Aguiar, E. C. Simões, A. Z. [UNESP] |
dc.subject.por.fl_str_mv |
BaBiO3 Fatigue Leakage current Polymeric precursor method Thin films |
topic |
BaBiO3 Fatigue Leakage current Polymeric precursor method Thin films |
description |
This study describes a straightforward synthesis route for producing barium bismuthate (BaBiO3) thin films via the polymeric precursor method. The research investigates the temperature-dependent characteristics of fatigue resistance and leakage behavior. The findings emphasize the crucial role of annealing temperature in influencing crystallization, morphology, fatigue resistance, and leakage current. Morphological analysis reveals distinct film structures influenced by annealing temperature. Specifically, the film annealed at 600°C exhibits higher remnant polarization (19.87 μC/cm2) compared to the film annealed at 800°C (8.41 μC/cm2). This behavior can be attributed to the small grain size, which enhances boundary effects and the contributions of domain walls. The 800°C annealed film exhibits a plate-like grain structure, with leakage current characteristics consistent with the traps-filled limit voltage (VTFL)-mechanism. In contrast, the film annealed at 600°C displays rounded grains and its high-field conduction behavior is well described by the space-charge-limited conduction (SCL) mechanism. Furthermore, the film annealed at 600°C demonstrates better fatigue resistance, sustaining up to 108 switching cycles without degradation. These results position it as a promising candidate for actuators, switches, and emerging electronic memory device applications. In conclusion, this study highlights the significance of annealing temperature in tailoring the properties of BaBiO3 thin films, providing valuable insights for optimizing their performance across various technological applications. |
publishDate |
2025 |
dc.date.none.fl_str_mv |
2025-04-29T19:33:52Z 2025-01-15 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1016/j.jallcom.2024.178341 Journal of Alloys and Compounds, v. 1011. 0925-8388 https://hdl.handle.net/11449/304100 10.1016/j.jallcom.2024.178341 2-s2.0-85213963465 |
url |
http://dx.doi.org/10.1016/j.jallcom.2024.178341 https://hdl.handle.net/11449/304100 |
identifier_str_mv |
Journal of Alloys and Compounds, v. 1011. 0925-8388 10.1016/j.jallcom.2024.178341 2-s2.0-85213963465 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Journal of Alloys and Compounds |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
repositoriounesp@unesp.br |
_version_ |
1834482604261244928 |