The infuence of different interfaces on electrical and optical characteristics of Te doped ALGaAsSB/ALAsSB Bragg Mirrors on InP.

Bibliographic Details
Main Author: Toginho Filho, Dari de Oliveira
Publication Date: 2008
Other Authors: Dias, Ivan Frederico Lupiano, Duarte, José Leonil, Laureto, Edson, Harmand, Jean C
Format: Article
Language: por
Source: Revista Semina: Ciências Exatas e Tecnológicas (Online)
Download full: https://ojs.uel.br/revistas/uel/index.php/semexatas/article/view/2972
Summary: The electrical and optical properties of non-doped and Te doped 6.5 periods AlGaAsSb/AlAsSb Bragg mirrors on InP grown by MBE with different types of interfaces between ternary and quaternary layers are reported. The techniques employed were photoluminescence, refectivity and IxV measurements. The digital alloy gradient interface seems to be the best alternative to optimize conduction without significant refectivity losses.
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spelling The infuence of different interfaces on electrical and optical characteristics of Te doped ALGaAsSB/ALAsSB Bragg Mirrors on InP.A infuência de diferentes interfaces nas características elétricas e ópticas de Espelhos de Bragg de ALGaAsSB/ALAsSB dopados com Te, sobre InP.SemiconductorBragg mirrorAlGaAsSbAlAsSb.SemicondutorEspelhos de BraggAlGaAsSbAlAsSb.Física da Materia CondensadaThe electrical and optical properties of non-doped and Te doped 6.5 periods AlGaAsSb/AlAsSb Bragg mirrors on InP grown by MBE with different types of interfaces between ternary and quaternary layers are reported. The techniques employed were photoluminescence, refectivity and IxV measurements. The digital alloy gradient interface seems to be the best alternative to optimize conduction without significant refectivity losses. São apresentadas as propriedades elétricas e ópticas de espelhos de Bragg com 6.5 períodos de AlGaAsSb/ AlAsSb não dopado e dopados com Te, sobre InP, crescidos por MBE com diferentes tipos de interface entre as camadas de material ternário e quaternário. As técnicas empregadas foram fotoluminescência, reflectividade e medições de IxV. A interface com liga digital em gradiente parece ser a melhor alternativa para otimizar condução elétrica sem perdas significativas da reflectividade.State University of Londrina2008-07-15info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionAvaliado pelos paresapplication/pdfhttps://ojs.uel.br/revistas/uel/index.php/semexatas/article/view/297210.5433/1679-0375.2008v29n1p39Semina: Ciências Exatas e Tecnológicas; Vol. 29 No. 1 (2008); 39-44Semina: Ciências Exatas e Tecnológicas; v. 29 n. 1 (2008); 39-441679-03751676-5451reponame:Revista Semina: Ciências Exatas e Tecnológicas (Online)instname:Universidade Estadual de Londrina (UEL)instacron:UELporhttps://ojs.uel.br/revistas/uel/index.php/semexatas/article/view/2972/2518Copyright (c) 2018 Semina: Exact and Technological Sciencesinfo:eu-repo/semantics/openAccessToginho Filho, Dari de OliveiraDias, Ivan Frederico LupianoDuarte, José LeonilLaureto, EdsonHarmand, Jean C2009-08-26T12:58:24Zoai:ojs2.ojs.uel.br:article/2972Revistahttps://ojs.uel.br/revistas/uel/index.php/semexatas/indexPUBhttps://ojs.uel.br/revistas/uel/index.php/semexatas/oaiseminaexatas@uel.br || periodicosuel@uel.br1679-03751676-5451opendoar:2009-08-26T12:58:24Revista Semina: Ciências Exatas e Tecnológicas (Online) - Universidade Estadual de Londrina (UEL)false
dc.title.none.fl_str_mv The infuence of different interfaces on electrical and optical characteristics of Te doped ALGaAsSB/ALAsSB Bragg Mirrors on InP.
A infuência de diferentes interfaces nas características elétricas e ópticas de Espelhos de Bragg de ALGaAsSB/ALAsSB dopados com Te, sobre InP.
title The infuence of different interfaces on electrical and optical characteristics of Te doped ALGaAsSB/ALAsSB Bragg Mirrors on InP.
spellingShingle The infuence of different interfaces on electrical and optical characteristics of Te doped ALGaAsSB/ALAsSB Bragg Mirrors on InP.
Toginho Filho, Dari de Oliveira
Semiconductor
Bragg mirror
AlGaAsSb
AlAsSb.
Semicondutor
Espelhos de Bragg
AlGaAsSb
AlAsSb.
Física da Materia Condensada
title_short The infuence of different interfaces on electrical and optical characteristics of Te doped ALGaAsSB/ALAsSB Bragg Mirrors on InP.
title_full The infuence of different interfaces on electrical and optical characteristics of Te doped ALGaAsSB/ALAsSB Bragg Mirrors on InP.
title_fullStr The infuence of different interfaces on electrical and optical characteristics of Te doped ALGaAsSB/ALAsSB Bragg Mirrors on InP.
title_full_unstemmed The infuence of different interfaces on electrical and optical characteristics of Te doped ALGaAsSB/ALAsSB Bragg Mirrors on InP.
title_sort The infuence of different interfaces on electrical and optical characteristics of Te doped ALGaAsSB/ALAsSB Bragg Mirrors on InP.
author Toginho Filho, Dari de Oliveira
author_facet Toginho Filho, Dari de Oliveira
Dias, Ivan Frederico Lupiano
Duarte, José Leonil
Laureto, Edson
Harmand, Jean C
author_role author
author2 Dias, Ivan Frederico Lupiano
Duarte, José Leonil
Laureto, Edson
Harmand, Jean C
author2_role author
author
author
author
dc.contributor.author.fl_str_mv Toginho Filho, Dari de Oliveira
Dias, Ivan Frederico Lupiano
Duarte, José Leonil
Laureto, Edson
Harmand, Jean C
dc.subject.por.fl_str_mv Semiconductor
Bragg mirror
AlGaAsSb
AlAsSb.
Semicondutor
Espelhos de Bragg
AlGaAsSb
AlAsSb.
Física da Materia Condensada
topic Semiconductor
Bragg mirror
AlGaAsSb
AlAsSb.
Semicondutor
Espelhos de Bragg
AlGaAsSb
AlAsSb.
Física da Materia Condensada
description The electrical and optical properties of non-doped and Te doped 6.5 periods AlGaAsSb/AlAsSb Bragg mirrors on InP grown by MBE with different types of interfaces between ternary and quaternary layers are reported. The techniques employed were photoluminescence, refectivity and IxV measurements. The digital alloy gradient interface seems to be the best alternative to optimize conduction without significant refectivity losses.
publishDate 2008
dc.date.none.fl_str_mv 2008-07-15
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
Avaliado pelos pares
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv https://ojs.uel.br/revistas/uel/index.php/semexatas/article/view/2972
10.5433/1679-0375.2008v29n1p39
url https://ojs.uel.br/revistas/uel/index.php/semexatas/article/view/2972
identifier_str_mv 10.5433/1679-0375.2008v29n1p39
dc.language.iso.fl_str_mv por
language por
dc.relation.none.fl_str_mv https://ojs.uel.br/revistas/uel/index.php/semexatas/article/view/2972/2518
dc.rights.driver.fl_str_mv Copyright (c) 2018 Semina: Exact and Technological Sciences
info:eu-repo/semantics/openAccess
rights_invalid_str_mv Copyright (c) 2018 Semina: Exact and Technological Sciences
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv State University of Londrina
publisher.none.fl_str_mv State University of Londrina
dc.source.none.fl_str_mv Semina: Ciências Exatas e Tecnológicas; Vol. 29 No. 1 (2008); 39-44
Semina: Ciências Exatas e Tecnológicas; v. 29 n. 1 (2008); 39-44
1679-0375
1676-5451
reponame:Revista Semina: Ciências Exatas e Tecnológicas (Online)
instname:Universidade Estadual de Londrina (UEL)
instacron:UEL
instname_str Universidade Estadual de Londrina (UEL)
instacron_str UEL
institution UEL
reponame_str Revista Semina: Ciências Exatas e Tecnológicas (Online)
collection Revista Semina: Ciências Exatas e Tecnológicas (Online)
repository.name.fl_str_mv Revista Semina: Ciências Exatas e Tecnológicas (Online) - Universidade Estadual de Londrina (UEL)
repository.mail.fl_str_mv seminaexatas@uel.br || periodicosuel@uel.br
_version_ 1841186543510749184

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