Optical amplification in localized doping of Er:Ti:LiNbO3 waveguides

Bibliographic Details
Main Author: Amin, Jaymin
Publication Date: 1999
Other Authors: Leite, António Manuel Pais Pereira, Almeida, José Manuel Marques Martins de
Format: Article
Language: eng
Source: Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
Download full: http://hdl.handle.net/10348/11759
Summary: An investigation on optical amplification in Ti waveguides in LiNb0 3 doped with Er ions by thermal diffusion of thin metallic stripes is presented. The possibility of fabricating efficient optical amplifiers in LiNb0 3 substrates realized by localization of the dopant on surface areas of the crystals was theoretically evaluated and the feasibility of fabricating efficient amplifiers in such doped structures was experimentally verified. It was concluded that the localized doping technique allows optimization of amplifier performance through adjustment of the active region geometry to the mode intensity profile.
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spelling Optical amplification in localized doping of Er:Ti:LiNbO3 waveguidesIntegrated opticsLiNb0 3 devicesAn investigation on optical amplification in Ti waveguides in LiNb0 3 doped with Er ions by thermal diffusion of thin metallic stripes is presented. The possibility of fabricating efficient optical amplifiers in LiNb0 3 substrates realized by localization of the dopant on surface areas of the crystals was theoretically evaluated and the feasibility of fabricating efficient amplifiers in such doped structures was experimentally verified. It was concluded that the localized doping technique allows optimization of amplifier performance through adjustment of the active region geometry to the mode intensity profile.SPIE2023-10-09T15:13:58Z1999-01-01T00:00:00Z19992016-10-22T15:11:19Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10348/11759engAmin, JayminLeite, António Manuel Pais PereiraAlmeida, José Manuel Marques Martins deinfo:eu-repo/semantics/openAccessreponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiainstacron:RCAAP2025-02-23T02:07:34Zoai:repositorio.utad.pt:10348/11759Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireinfo@rcaap.ptopendoar:https://opendoar.ac.uk/repository/71602025-05-28T12:38:34.286423Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) - FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiafalse
dc.title.none.fl_str_mv Optical amplification in localized doping of Er:Ti:LiNbO3 waveguides
title Optical amplification in localized doping of Er:Ti:LiNbO3 waveguides
spellingShingle Optical amplification in localized doping of Er:Ti:LiNbO3 waveguides
Amin, Jaymin
Integrated optics
LiNb0 3 devices
title_short Optical amplification in localized doping of Er:Ti:LiNbO3 waveguides
title_full Optical amplification in localized doping of Er:Ti:LiNbO3 waveguides
title_fullStr Optical amplification in localized doping of Er:Ti:LiNbO3 waveguides
title_full_unstemmed Optical amplification in localized doping of Er:Ti:LiNbO3 waveguides
title_sort Optical amplification in localized doping of Er:Ti:LiNbO3 waveguides
author Amin, Jaymin
author_facet Amin, Jaymin
Leite, António Manuel Pais Pereira
Almeida, José Manuel Marques Martins de
author_role author
author2 Leite, António Manuel Pais Pereira
Almeida, José Manuel Marques Martins de
author2_role author
author
dc.contributor.author.fl_str_mv Amin, Jaymin
Leite, António Manuel Pais Pereira
Almeida, José Manuel Marques Martins de
dc.subject.por.fl_str_mv Integrated optics
LiNb0 3 devices
topic Integrated optics
LiNb0 3 devices
description An investigation on optical amplification in Ti waveguides in LiNb0 3 doped with Er ions by thermal diffusion of thin metallic stripes is presented. The possibility of fabricating efficient optical amplifiers in LiNb0 3 substrates realized by localization of the dopant on surface areas of the crystals was theoretically evaluated and the feasibility of fabricating efficient amplifiers in such doped structures was experimentally verified. It was concluded that the localized doping technique allows optimization of amplifier performance through adjustment of the active region geometry to the mode intensity profile.
publishDate 1999
dc.date.none.fl_str_mv 1999-01-01T00:00:00Z
1999
2016-10-22T15:11:19Z
2023-10-09T15:13:58Z
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10348/11759
url http://hdl.handle.net/10348/11759
dc.language.iso.fl_str_mv eng
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