Electronic excitation to low-lying states of GeF4 molecule by electron impact

Detalhes bibliográficos
Autor(a) principal: Ohtomi, S.
Data de Publicação: 2015
Outros Autores: Matsui, M., Mochizuki, Y., Suga, A., Kato, H., Hoshino, M., Duflot, D., Limão-Vieira, P., Tanaka, Hideaki
Idioma: eng
Título da fonte: Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
Texto Completo: https://doi.org/10.1088/1742-6596/635/7/072041
Resumo: We report on the measurements of the electron impact electronic excitation cross sections for XF4 (X = C, Si and Ge) molecules at 100 eV, 5° scattering angle and 30 eV, 30° in the electron energy loss range 8.0 - 18 eV. For a target of GeF4 molecule, the optically-forbidden behavior has been observed in the lower electron energy loss range.
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spelling Electronic excitation to low-lying states of GeF4 molecule by electron impactA comparative study with CF4 and SiF4 moleculesSCATTERINGSPECTROSCOPYPhysics and Astronomy(all)We report on the measurements of the electron impact electronic excitation cross sections for XF4 (X = C, Si and Ge) molecules at 100 eV, 5° scattering angle and 30 eV, 30° in the electron energy loss range 8.0 - 18 eV. For a target of GeF4 molecule, the optically-forbidden behavior has been observed in the lower electron energy loss range.IOP PublishingCeFITec – Centro de Física e Investigação TecnológicaDF – Departamento de FísicaRUNOhtomi, S.Matsui, M.Mochizuki, Y.Suga, A.Kato, H.Hoshino, M.Duflot, D.Limão-Vieira, P.Tanaka, Hideaki2018-05-04T22:21:13Z2015-09-072015-09-07T00:00:00Zconference objectinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://doi.org/10.1088/1742-6596/635/7/072041eng1742-6588PURE: 4095058http://www.scopus.com/inward/record.url?scp=84948844657&partnerID=8YFLogxKhttps://doi.org/10.1088/1742-6596/635/7/072041info:eu-repo/semantics/openAccessreponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiainstacron:RCAAP2024-05-22T17:32:18Zoai:run.unl.pt:10362/36020Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireinfo@rcaap.ptopendoar:https://opendoar.ac.uk/repository/71602025-05-28T17:03:21.714030Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) - FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiafalse
dc.title.none.fl_str_mv Electronic excitation to low-lying states of GeF4 molecule by electron impact
A comparative study with CF4 and SiF4 molecules
title Electronic excitation to low-lying states of GeF4 molecule by electron impact
spellingShingle Electronic excitation to low-lying states of GeF4 molecule by electron impact
Ohtomi, S.
SCATTERING
SPECTROSCOPY
Physics and Astronomy(all)
title_short Electronic excitation to low-lying states of GeF4 molecule by electron impact
title_full Electronic excitation to low-lying states of GeF4 molecule by electron impact
title_fullStr Electronic excitation to low-lying states of GeF4 molecule by electron impact
title_full_unstemmed Electronic excitation to low-lying states of GeF4 molecule by electron impact
title_sort Electronic excitation to low-lying states of GeF4 molecule by electron impact
author Ohtomi, S.
author_facet Ohtomi, S.
Matsui, M.
Mochizuki, Y.
Suga, A.
Kato, H.
Hoshino, M.
Duflot, D.
Limão-Vieira, P.
Tanaka, Hideaki
author_role author
author2 Matsui, M.
Mochizuki, Y.
Suga, A.
Kato, H.
Hoshino, M.
Duflot, D.
Limão-Vieira, P.
Tanaka, Hideaki
author2_role author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv CeFITec – Centro de Física e Investigação Tecnológica
DF – Departamento de Física
RUN
dc.contributor.author.fl_str_mv Ohtomi, S.
Matsui, M.
Mochizuki, Y.
Suga, A.
Kato, H.
Hoshino, M.
Duflot, D.
Limão-Vieira, P.
Tanaka, Hideaki
dc.subject.por.fl_str_mv SCATTERING
SPECTROSCOPY
Physics and Astronomy(all)
topic SCATTERING
SPECTROSCOPY
Physics and Astronomy(all)
description We report on the measurements of the electron impact electronic excitation cross sections for XF4 (X = C, Si and Ge) molecules at 100 eV, 5° scattering angle and 30 eV, 30° in the electron energy loss range 8.0 - 18 eV. For a target of GeF4 molecule, the optically-forbidden behavior has been observed in the lower electron energy loss range.
publishDate 2015
dc.date.none.fl_str_mv 2015-09-07
2015-09-07T00:00:00Z
2018-05-04T22:21:13Z
dc.type.driver.fl_str_mv conference object
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
status_str publishedVersion
dc.identifier.uri.fl_str_mv https://doi.org/10.1088/1742-6596/635/7/072041
url https://doi.org/10.1088/1742-6596/635/7/072041
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 1742-6588
PURE: 4095058
http://www.scopus.com/inward/record.url?scp=84948844657&partnerID=8YFLogxK
https://doi.org/10.1088/1742-6596/635/7/072041
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv IOP Publishing
publisher.none.fl_str_mv IOP Publishing
dc.source.none.fl_str_mv reponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
instacron:RCAAP
instname_str FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
instacron_str RCAAP
institution RCAAP
reponame_str Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
collection Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
repository.name.fl_str_mv Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) - FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
repository.mail.fl_str_mv info@rcaap.pt
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