Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering

Bibliographic Details
Main Author: Cerqueira, M. F.
Publication Date: 2001
Other Authors: Stepikhova, M., Ferreira, J. A.
Format: Article
Language: eng
Source: Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
Download full: https://hdl.handle.net/1822/14173
Summary: Microcrystalline silicon thin films doped with erbium were produced by RF sputtering and their structural, chemical and optical properties were studied by X-ray diffractometry at grazing incidence, Rutherford back scattering and optical transmission spectroscopy. The samples exhibit a sharp photoluminescence (PL) spectrum from the Er centres with the strongest peak positioned at 1.536 microm with a full width at half maximum of about 8 nm. When the temperature varies between 5K and 300K the photoluminescence decreases only five fold, in contrast to the behaviour reported for monocrystalline silicon.
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spelling Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputteringPhotoluminescenceErbiumNanocrystalline siliconScience & TechnologyMicrocrystalline silicon thin films doped with erbium were produced by RF sputtering and their structural, chemical and optical properties were studied by X-ray diffractometry at grazing incidence, Rutherford back scattering and optical transmission spectroscopy. The samples exhibit a sharp photoluminescence (PL) spectrum from the Er centres with the strongest peak positioned at 1.536 microm with a full width at half maximum of about 8 nm. When the temperature varies between 5K and 300K the photoluminescence decreases only five fold, in contrast to the behaviour reported for monocrystalline silicon.ElsevierUniversidade do MinhoCerqueira, M. F.Stepikhova, M.Ferreira, J. A.20012001-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/1822/14173eng0921-510710.1016/S0921-5107(00)00684-Xhttp://www.sciencedirect.com/science/article/pii/S092151070000684Xinfo:eu-repo/semantics/openAccessreponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiainstacron:RCAAP2025-04-12T04:10:36Zoai:repositorium.sdum.uminho.pt:1822/14173Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireinfo@rcaap.ptopendoar:https://opendoar.ac.uk/repository/71602025-05-28T14:54:00.777051Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) - FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiafalse
dc.title.none.fl_str_mv Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering
title Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering
spellingShingle Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering
Cerqueira, M. F.
Photoluminescence
Erbium
Nanocrystalline silicon
Science & Technology
title_short Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering
title_full Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering
title_fullStr Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering
title_full_unstemmed Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering
title_sort Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering
author Cerqueira, M. F.
author_facet Cerqueira, M. F.
Stepikhova, M.
Ferreira, J. A.
author_role author
author2 Stepikhova, M.
Ferreira, J. A.
author2_role author
author
dc.contributor.none.fl_str_mv Universidade do Minho
dc.contributor.author.fl_str_mv Cerqueira, M. F.
Stepikhova, M.
Ferreira, J. A.
dc.subject.por.fl_str_mv Photoluminescence
Erbium
Nanocrystalline silicon
Science & Technology
topic Photoluminescence
Erbium
Nanocrystalline silicon
Science & Technology
description Microcrystalline silicon thin films doped with erbium were produced by RF sputtering and their structural, chemical and optical properties were studied by X-ray diffractometry at grazing incidence, Rutherford back scattering and optical transmission spectroscopy. The samples exhibit a sharp photoluminescence (PL) spectrum from the Er centres with the strongest peak positioned at 1.536 microm with a full width at half maximum of about 8 nm. When the temperature varies between 5K and 300K the photoluminescence decreases only five fold, in contrast to the behaviour reported for monocrystalline silicon.
publishDate 2001
dc.date.none.fl_str_mv 2001
2001-01-01T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv https://hdl.handle.net/1822/14173
url https://hdl.handle.net/1822/14173
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 0921-5107
10.1016/S0921-5107(00)00684-X
http://www.sciencedirect.com/science/article/pii/S092151070000684X
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
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