Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering
| Main Author: | |
|---|---|
| Publication Date: | 2001 |
| Other Authors: | , |
| Format: | Article |
| Language: | eng |
| Source: | Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) |
| Download full: | https://hdl.handle.net/1822/14173 |
Summary: | Microcrystalline silicon thin films doped with erbium were produced by RF sputtering and their structural, chemical and optical properties were studied by X-ray diffractometry at grazing incidence, Rutherford back scattering and optical transmission spectroscopy. The samples exhibit a sharp photoluminescence (PL) spectrum from the Er centres with the strongest peak positioned at 1.536 microm with a full width at half maximum of about 8 nm. When the temperature varies between 5K and 300K the photoluminescence decreases only five fold, in contrast to the behaviour reported for monocrystalline silicon. |
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Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputteringPhotoluminescenceErbiumNanocrystalline siliconScience & TechnologyMicrocrystalline silicon thin films doped with erbium were produced by RF sputtering and their structural, chemical and optical properties were studied by X-ray diffractometry at grazing incidence, Rutherford back scattering and optical transmission spectroscopy. The samples exhibit a sharp photoluminescence (PL) spectrum from the Er centres with the strongest peak positioned at 1.536 microm with a full width at half maximum of about 8 nm. When the temperature varies between 5K and 300K the photoluminescence decreases only five fold, in contrast to the behaviour reported for monocrystalline silicon.ElsevierUniversidade do MinhoCerqueira, M. F.Stepikhova, M.Ferreira, J. A.20012001-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/1822/14173eng0921-510710.1016/S0921-5107(00)00684-Xhttp://www.sciencedirect.com/science/article/pii/S092151070000684Xinfo:eu-repo/semantics/openAccessreponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiainstacron:RCAAP2025-04-12T04:10:36Zoai:repositorium.sdum.uminho.pt:1822/14173Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireinfo@rcaap.ptopendoar:https://opendoar.ac.uk/repository/71602025-05-28T14:54:00.777051Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) - FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiafalse |
| dc.title.none.fl_str_mv |
Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering |
| title |
Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering |
| spellingShingle |
Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering Cerqueira, M. F. Photoluminescence Erbium Nanocrystalline silicon Science & Technology |
| title_short |
Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering |
| title_full |
Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering |
| title_fullStr |
Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering |
| title_full_unstemmed |
Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering |
| title_sort |
Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering |
| author |
Cerqueira, M. F. |
| author_facet |
Cerqueira, M. F. Stepikhova, M. Ferreira, J. A. |
| author_role |
author |
| author2 |
Stepikhova, M. Ferreira, J. A. |
| author2_role |
author author |
| dc.contributor.none.fl_str_mv |
Universidade do Minho |
| dc.contributor.author.fl_str_mv |
Cerqueira, M. F. Stepikhova, M. Ferreira, J. A. |
| dc.subject.por.fl_str_mv |
Photoluminescence Erbium Nanocrystalline silicon Science & Technology |
| topic |
Photoluminescence Erbium Nanocrystalline silicon Science & Technology |
| description |
Microcrystalline silicon thin films doped with erbium were produced by RF sputtering and their structural, chemical and optical properties were studied by X-ray diffractometry at grazing incidence, Rutherford back scattering and optical transmission spectroscopy. The samples exhibit a sharp photoluminescence (PL) spectrum from the Er centres with the strongest peak positioned at 1.536 microm with a full width at half maximum of about 8 nm. When the temperature varies between 5K and 300K the photoluminescence decreases only five fold, in contrast to the behaviour reported for monocrystalline silicon. |
| publishDate |
2001 |
| dc.date.none.fl_str_mv |
2001 2001-01-01T00:00:00Z |
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info:eu-repo/semantics/publishedVersion |
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info:eu-repo/semantics/article |
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article |
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publishedVersion |
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https://hdl.handle.net/1822/14173 |
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https://hdl.handle.net/1822/14173 |
| dc.language.iso.fl_str_mv |
eng |
| language |
eng |
| dc.relation.none.fl_str_mv |
0921-5107 10.1016/S0921-5107(00)00684-X http://www.sciencedirect.com/science/article/pii/S092151070000684X |
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info:eu-repo/semantics/openAccess |
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openAccess |
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application/pdf |
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Elsevier |
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Elsevier |
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