Impact of disorder on optical phonons confined in CdS nano-crystallites embedded in a SiO2 matrix

Bibliographic Details
Main Author: Vasilevskiy, Mikhail
Publication Date: 2001
Other Authors: Rolo, Anabela G., Gomes, M. J. M., Vikhrova, Olga, Ricolleau, Cristian
Format: Article
Language: eng
Source: Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
Download full: http://hdl.handle.net/1822/5458
Summary: Non-resonant Raman spectroscopy studies of a set of CdS films annealed at different temperatures were performed and showed a direct correlation between the width of the Raman peak produced by CdS-like optical phonons and the crystalline quality of the semiconductor phase probed by x-ray diffraction (XRD) and transmission electron microscopy (TEM). In order to decribe the Raman lineshape a model proposed by Trallero-Giner et al (1998 Phys. Rev. B 57 4664) was used, which considers optical phonons confined in small semiconductor spheres with a size distribution. The model is shown to give a good reproduction of the spectra of samples where the semiconductor phase is most crystalline. However, it required too large values of phonon damping to fit the spectra of several other samples, which, according to XRD and TEM data, do contain CdS nano-crystallites. This large broadening of the Raman peak was considered as inhomogeneous, i.e. associated with disorder. Numerical lattice dynamics calculations were performed for 2D binary clusters of arbitrary shape and three kinds of disorder were considered, (i) random variation of the Cd–S bond frequency from one nano-crystallite to another, (ii) cluster shape irregularities and (iii) fluctuations of the nearest-neighbour interaction constant within one cluster. It is shown that ‘ensemble disorder’ (i) can be responsible for a shoulder above the bulk CdS phonon frequency observed for some of our samples. The effect of shape disorder (ii) is similar to that of the size dispersion producing some inhomogeneous broadening of the peak. In addition, it gives rise to an extra low-frequency mode originating from the top of the acoustic band. The force constant’s disorder (iii) is shown to result in a stronger asymmetric broadening of the Raman peak.
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spelling Impact of disorder on optical phonons confined in CdS nano-crystallites embedded in a SiO2 matrixPhononsQuantum dotsRaman scatteringScience & TechnologyNon-resonant Raman spectroscopy studies of a set of CdS films annealed at different temperatures were performed and showed a direct correlation between the width of the Raman peak produced by CdS-like optical phonons and the crystalline quality of the semiconductor phase probed by x-ray diffraction (XRD) and transmission electron microscopy (TEM). In order to decribe the Raman lineshape a model proposed by Trallero-Giner et al (1998 Phys. Rev. B 57 4664) was used, which considers optical phonons confined in small semiconductor spheres with a size distribution. The model is shown to give a good reproduction of the spectra of samples where the semiconductor phase is most crystalline. However, it required too large values of phonon damping to fit the spectra of several other samples, which, according to XRD and TEM data, do contain CdS nano-crystallites. This large broadening of the Raman peak was considered as inhomogeneous, i.e. associated with disorder. Numerical lattice dynamics calculations were performed for 2D binary clusters of arbitrary shape and three kinds of disorder were considered, (i) random variation of the Cd–S bond frequency from one nano-crystallite to another, (ii) cluster shape irregularities and (iii) fluctuations of the nearest-neighbour interaction constant within one cluster. It is shown that ‘ensemble disorder’ (i) can be responsible for a shoulder above the bulk CdS phonon frequency observed for some of our samples. The effect of shape disorder (ii) is similar to that of the size dispersion producing some inhomogeneous broadening of the peak. In addition, it gives rise to an extra low-frequency mode originating from the top of the acoustic band. The force constant’s disorder (iii) is shown to result in a stronger asymmetric broadening of the Raman peak.Fundação para a Ciência e a Tecnologia (FCT)IOP PublishingUniversidade do MinhoVasilevskiy, MikhailRolo, Anabela G.Gomes, M. J. M.Vikhrova, OlgaRicolleau, Cristian2001-042001-04-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/1822/5458eng"Journal of physics : condensed matter". ISSN 0953-8984 . 13:14 (Apr. 2001) 3491-3509.0953-898410.1088/0953-8984/13/14/320info:eu-repo/semantics/openAccessreponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiainstacron:RCAAP2024-05-11T06:07:34Zoai:repositorium.sdum.uminho.pt:1822/5458Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireinfo@rcaap.ptopendoar:https://opendoar.ac.uk/repository/71602025-05-28T15:41:54.253106Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) - FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiafalse
dc.title.none.fl_str_mv Impact of disorder on optical phonons confined in CdS nano-crystallites embedded in a SiO2 matrix
title Impact of disorder on optical phonons confined in CdS nano-crystallites embedded in a SiO2 matrix
spellingShingle Impact of disorder on optical phonons confined in CdS nano-crystallites embedded in a SiO2 matrix
Vasilevskiy, Mikhail
Phonons
Quantum dots
Raman scattering
Science & Technology
title_short Impact of disorder on optical phonons confined in CdS nano-crystallites embedded in a SiO2 matrix
title_full Impact of disorder on optical phonons confined in CdS nano-crystallites embedded in a SiO2 matrix
title_fullStr Impact of disorder on optical phonons confined in CdS nano-crystallites embedded in a SiO2 matrix
title_full_unstemmed Impact of disorder on optical phonons confined in CdS nano-crystallites embedded in a SiO2 matrix
title_sort Impact of disorder on optical phonons confined in CdS nano-crystallites embedded in a SiO2 matrix
author Vasilevskiy, Mikhail
author_facet Vasilevskiy, Mikhail
Rolo, Anabela G.
Gomes, M. J. M.
Vikhrova, Olga
Ricolleau, Cristian
author_role author
author2 Rolo, Anabela G.
Gomes, M. J. M.
Vikhrova, Olga
Ricolleau, Cristian
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Universidade do Minho
dc.contributor.author.fl_str_mv Vasilevskiy, Mikhail
Rolo, Anabela G.
Gomes, M. J. M.
Vikhrova, Olga
Ricolleau, Cristian
dc.subject.por.fl_str_mv Phonons
Quantum dots
Raman scattering
Science & Technology
topic Phonons
Quantum dots
Raman scattering
Science & Technology
description Non-resonant Raman spectroscopy studies of a set of CdS films annealed at different temperatures were performed and showed a direct correlation between the width of the Raman peak produced by CdS-like optical phonons and the crystalline quality of the semiconductor phase probed by x-ray diffraction (XRD) and transmission electron microscopy (TEM). In order to decribe the Raman lineshape a model proposed by Trallero-Giner et al (1998 Phys. Rev. B 57 4664) was used, which considers optical phonons confined in small semiconductor spheres with a size distribution. The model is shown to give a good reproduction of the spectra of samples where the semiconductor phase is most crystalline. However, it required too large values of phonon damping to fit the spectra of several other samples, which, according to XRD and TEM data, do contain CdS nano-crystallites. This large broadening of the Raman peak was considered as inhomogeneous, i.e. associated with disorder. Numerical lattice dynamics calculations were performed for 2D binary clusters of arbitrary shape and three kinds of disorder were considered, (i) random variation of the Cd–S bond frequency from one nano-crystallite to another, (ii) cluster shape irregularities and (iii) fluctuations of the nearest-neighbour interaction constant within one cluster. It is shown that ‘ensemble disorder’ (i) can be responsible for a shoulder above the bulk CdS phonon frequency observed for some of our samples. The effect of shape disorder (ii) is similar to that of the size dispersion producing some inhomogeneous broadening of the peak. In addition, it gives rise to an extra low-frequency mode originating from the top of the acoustic band. The force constant’s disorder (iii) is shown to result in a stronger asymmetric broadening of the Raman peak.
publishDate 2001
dc.date.none.fl_str_mv 2001-04
2001-04-01T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/1822/5458
url http://hdl.handle.net/1822/5458
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv "Journal of physics : condensed matter". ISSN 0953-8984 . 13:14 (Apr. 2001) 3491-3509.
0953-8984
10.1088/0953-8984/13/14/320
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dc.publisher.none.fl_str_mv IOP Publishing
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instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
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reponame_str Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
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