An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition

Detalhes bibliográficos
Autor(a) principal: Ghumman, C. A. A.
Data de Publicação: 2012
Outros Autores: Moutinho, A. M. C., Santos, A., Teodoro, O. M. N. D., Tolstogouzov, A.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
Texto Completo: https://doi.org/10.1016/j.apsusc.2011.10.079
Resumo: C. A. A. Ghumman gratefully thanks the Portuguese Foundation for Science and Technology – Fundação para a Ciência e a Tecnologia (Grant No. SFRH/BD/44558/2008) for the financial support of this research.
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spelling An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium depositionElectronegativityIII-V semiconductorsNeutral cesium depositionSecondary ion yield enhancementTOF-SIMSWork functionSurfaces, Coatings and FilmsC. A. A. Ghumman gratefully thanks the Portuguese Foundation for Science and Technology – Fundação para a Ciência e a Tecnologia (Grant No. SFRH/BD/44558/2008) for the financial support of this research.A TOF-SIMS VG Ionex IX23LS with upgraded data acquisition and control system was used to study the secondary emission of negative atomic and cluster ions of non-metallic elements (P, As and Sb) upon a 19 keV Ga + bombardment of non-degenerated III-V semiconductors (GaP, GaAs, GaSb, InP, InAs and InSb) with prior neutral Cs deposition from a getter dispenser. It was found that surface cesiation enhances the peak intensity of all negative ion species; in the case of atomic ions, the greatest increase (360) was observed for P - emitted from InP. Such an enhancement was larger for In-based than for Ga-based compounds. We explained that in terms of an electronegativity difference between the composing atoms of III-V semiconductors. The greater electronegativity difference (bond ionicity) of In-based compounds resulted in the greater Cs-induced work function decrease leading to a higher increase in the ionization probability of secondary ions.CeFITec – Centro de Física e Investigação TecnológicaDF – Departamento de FísicaRUNGhumman, C. A. A.Moutinho, A. M. C.Santos, A.Teodoro, O. M. N. D.Tolstogouzov, A.2019-07-29T22:28:16Z2012-01-152012-01-15T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article8application/pdfhttps://doi.org/10.1016/j.apsusc.2011.10.079eng0169-4332PURE: 6475511http://www.scopus.com/inward/record.url?scp=84855541822&partnerID=8YFLogxKhttps://doi.org/10.1016/j.apsusc.2011.10.079info:eu-repo/semantics/openAccessreponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiainstacron:RCAAP2024-05-22T17:40:29Zoai:run.unl.pt:10362/76908Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireinfo@rcaap.ptopendoar:https://opendoar.ac.uk/repository/71602025-05-28T17:11:29.530917Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) - FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiafalse
dc.title.none.fl_str_mv An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition
title An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition
spellingShingle An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition
Ghumman, C. A. A.
Electronegativity
III-V semiconductors
Neutral cesium deposition
Secondary ion yield enhancement
TOF-SIMS
Work function
Surfaces, Coatings and Films
title_short An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition
title_full An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition
title_fullStr An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition
title_full_unstemmed An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition
title_sort An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition
author Ghumman, C. A. A.
author_facet Ghumman, C. A. A.
Moutinho, A. M. C.
Santos, A.
Teodoro, O. M. N. D.
Tolstogouzov, A.
author_role author
author2 Moutinho, A. M. C.
Santos, A.
Teodoro, O. M. N. D.
Tolstogouzov, A.
author2_role author
author
author
author
dc.contributor.none.fl_str_mv CeFITec – Centro de Física e Investigação Tecnológica
DF – Departamento de Física
RUN
dc.contributor.author.fl_str_mv Ghumman, C. A. A.
Moutinho, A. M. C.
Santos, A.
Teodoro, O. M. N. D.
Tolstogouzov, A.
dc.subject.por.fl_str_mv Electronegativity
III-V semiconductors
Neutral cesium deposition
Secondary ion yield enhancement
TOF-SIMS
Work function
Surfaces, Coatings and Films
topic Electronegativity
III-V semiconductors
Neutral cesium deposition
Secondary ion yield enhancement
TOF-SIMS
Work function
Surfaces, Coatings and Films
description C. A. A. Ghumman gratefully thanks the Portuguese Foundation for Science and Technology – Fundação para a Ciência e a Tecnologia (Grant No. SFRH/BD/44558/2008) for the financial support of this research.
publishDate 2012
dc.date.none.fl_str_mv 2012-01-15
2012-01-15T00:00:00Z
2019-07-29T22:28:16Z
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dc.language.iso.fl_str_mv eng
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dc.relation.none.fl_str_mv 0169-4332
PURE: 6475511
http://www.scopus.com/inward/record.url?scp=84855541822&partnerID=8YFLogxK
https://doi.org/10.1016/j.apsusc.2011.10.079
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