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AlNxOy thin films for electrical applications

Detalhes bibliográficos
Autor(a) principal: Borges, Joel Nuno Pinto
Data de Publicação: 2011
Outros Autores: Arvinte, R., Sousa, R. E., Vaz, F., Marques, L.
Idioma: eng
Título da fonte: Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
Texto Completo: http://hdl.handle.net/1822/14782
Resumo: Comunicação oral
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spelling AlNxOy thin films for electrical applicationsAluminium oxynitrideAluminium oxideAluminium nitrideElectrical resistivityComunicação oralAluminium oxide (Al2O3) is an insulator material, with high electrical breakdown, large band gap and high permittivity. Its dielectric properties make it a promising candidate to be used as gate material instead of SiO2 in microelectronic applications, such as in flash memory circuits, organic thin film transistors (OTFT) and MOSFETs. On the other hand, aluminium nitride (AlN) is a ceramic piezoelectric material with high electrical resistivity and excellent thermal properties, that has been used in many applications such as substrate in microelectronic devices, fabrication of high power and high temperature electronic devices, surface acoustic wave (SAW) devices, and electronic packaging. The interesting electrical properties of Al2O3 and AlN opens the door to study the electrical properties of the Al-N-O system, which, in a first approach, can combine some of both Al2O3 and AlN advantages by tailoring the concentrations of the three elements, according to the particular application envisaged. The use of aluminium oxynitride is not yet very common, despite some very few examples in the field of protective coatings, optoelectronics, and in microelectronics as a dielectric in multilayer capacitors. The main objective of the present work is to study the variation of the electrical response of the AlNxOy thin films as a function of the composition of the prepared films, using as reference the two base binary systems: AlNx and AlOy. The films are deposited by DC magnetron sputtering, with the discharge parameters monitored during the deposition in order to control the chemical composition, according to the particular results of the electrical behavior. The electrical resistivity of the films is observed to depend strongly on film stoichiometry, composition and structure of the samples. Preliminary results show a smoth transition of the film’s electrical characteristics between those of closely metallic (similar to the response of pure Al films), towards those of AlN and Al2O3 films. These results confirm the possibility to tailor in a very smooth way the characteristics of materials between those of metallic towards insulting ones, opening thus a widespread of possible applications.Portuguese Foundation for Science and Technology (FCT) - SFRH/BD/47118/2008Universidade do MinhoBorges, Joel Nuno PintoArvinte, R.Sousa, R. E.Vaz, F.Marques, L.20112011-01-01T00:00:00Zconference objectinfo:eu-repo/semantics/publishedVersionapplication/pdfhttp://hdl.handle.net/1822/14782enghttp://www.materiais2011.org/info:eu-repo/semantics/openAccessreponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiainstacron:RCAAP2024-05-11T05:47:30Zoai:repositorium.sdum.uminho.pt:1822/14782Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireinfo@rcaap.ptopendoar:https://opendoar.ac.uk/repository/71602025-05-28T15:30:17.803740Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) - FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiafalse
dc.title.none.fl_str_mv AlNxOy thin films for electrical applications
title AlNxOy thin films for electrical applications
spellingShingle AlNxOy thin films for electrical applications
Borges, Joel Nuno Pinto
Aluminium oxynitride
Aluminium oxide
Aluminium nitride
Electrical resistivity
title_short AlNxOy thin films for electrical applications
title_full AlNxOy thin films for electrical applications
title_fullStr AlNxOy thin films for electrical applications
title_full_unstemmed AlNxOy thin films for electrical applications
title_sort AlNxOy thin films for electrical applications
author Borges, Joel Nuno Pinto
author_facet Borges, Joel Nuno Pinto
Arvinte, R.
Sousa, R. E.
Vaz, F.
Marques, L.
author_role author
author2 Arvinte, R.
Sousa, R. E.
Vaz, F.
Marques, L.
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Universidade do Minho
dc.contributor.author.fl_str_mv Borges, Joel Nuno Pinto
Arvinte, R.
Sousa, R. E.
Vaz, F.
Marques, L.
dc.subject.por.fl_str_mv Aluminium oxynitride
Aluminium oxide
Aluminium nitride
Electrical resistivity
topic Aluminium oxynitride
Aluminium oxide
Aluminium nitride
Electrical resistivity
description Comunicação oral
publishDate 2011
dc.date.none.fl_str_mv 2011
2011-01-01T00:00:00Z
dc.type.driver.fl_str_mv conference object
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/1822/14782
url http://hdl.handle.net/1822/14782
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv http://www.materiais2011.org/
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
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dc.source.none.fl_str_mv reponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
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instname_str FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
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repository.mail.fl_str_mv info@rcaap.pt
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