Al2O3 ultra-thin films deposited by PEALD for rubidium optically pumped atomic magnetometers with on-chip photodiode

Bibliographic Details
Main Author: Cunha, Florival Moura
Publication Date: 2023
Other Authors: Silva, Manuel F., Gomes, Nuno M., Correia, J. H.
Format: Article
Language: eng
Source: Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
Download full: https://hdl.handle.net/1822/86765
Summary: This communication shows the recipe for plasma-enhanced atomic layer deposition (PEALD) Al<sub>2</sub>O<sub>3</sub> ultra-thin films with thicknesses below 40 nm. Al<sub>2</sub>O<sub>3</sub> ultra-thin films were deposited by PEALD to improve the rubidium optically pumped atomic magnetometers’ (OPMs) cell lifetime. This requirement is due to the consumption of the alkali metal (rubidium) inside the vapor cells. Moreover, as a silicon wafer was used, an on-chip photodiode was already integrated into the fabrication of the OPM. The ALD parameters were achieved with a GPC close to 1.2 Å/cycle and the ALD window threshold at 250 °C. The PEALD Al<sub>2</sub>O<sub>3</sub> ultra-thin films showed a refractive index of 1.55 at 795 nm (tuned to the D1 transition of rubidium for spin-polarization of the atoms). The EDS chemical elemental analysis showed an atomic percentage of 58.65% for oxygen (O) and 41.35% for aluminum (Al), with a mass percentage of 45.69% for O and 54.31% for Al. A sensitive XPS surface elemental composition confirmed the formation of the PEALD Al<sub>2</sub>O<sub>3</sub> ultra-thin film with an Al 2s peak at 119.2 eV, Al 2p peak at 74.4 eV, and was oxygen rich. The SEM analysis presented a non-uniformity of around 3%. Finally, the rubidium consumption in the coated OPM was monitored. Therefore, PEALD Al<sub>2</sub>O<sub>3</sub> ultra-thin films were deposited while controlling their optical refractive index, crystalline properties, void fraction, surface roughness and thickness uniformity (on OPM volume 1 mm × 1 mm × 0.180 mm cavity etched by RIE), as well as the chemical composition for improving the rubidium OPM lifetime.
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spelling Al2O3 ultra-thin films deposited by PEALD for rubidium optically pumped atomic magnetometers with on-chip photodiodeOptically pumped atomic magnetometers (OPMs)Atomic layer deposition (ALD)Ultra-thin filmsAl2O3Plasma-enhanced atomic layer deposition (PEALD)Trimethylaluminum (TMA)Al O 2 3Science & TechnologyThis communication shows the recipe for plasma-enhanced atomic layer deposition (PEALD) Al<sub>2</sub>O<sub>3</sub> ultra-thin films with thicknesses below 40 nm. Al<sub>2</sub>O<sub>3</sub> ultra-thin films were deposited by PEALD to improve the rubidium optically pumped atomic magnetometers’ (OPMs) cell lifetime. This requirement is due to the consumption of the alkali metal (rubidium) inside the vapor cells. Moreover, as a silicon wafer was used, an on-chip photodiode was already integrated into the fabrication of the OPM. The ALD parameters were achieved with a GPC close to 1.2 Å/cycle and the ALD window threshold at 250 °C. The PEALD Al<sub>2</sub>O<sub>3</sub> ultra-thin films showed a refractive index of 1.55 at 795 nm (tuned to the D1 transition of rubidium for spin-polarization of the atoms). The EDS chemical elemental analysis showed an atomic percentage of 58.65% for oxygen (O) and 41.35% for aluminum (Al), with a mass percentage of 45.69% for O and 54.31% for Al. A sensitive XPS surface elemental composition confirmed the formation of the PEALD Al<sub>2</sub>O<sub>3</sub> ultra-thin film with an Al 2s peak at 119.2 eV, Al 2p peak at 74.4 eV, and was oxygen rich. The SEM analysis presented a non-uniformity of around 3%. Finally, the rubidium consumption in the coated OPM was monitored. Therefore, PEALD Al<sub>2</sub>O<sub>3</sub> ultra-thin films were deposited while controlling their optical refractive index, crystalline properties, void fraction, surface roughness and thickness uniformity (on OPM volume 1 mm × 1 mm × 0.180 mm cavity etched by RIE), as well as the chemical composition for improving the rubidium OPM lifetime.This work was supported by project MME reference 105399; CMEMS-UMinho Strategic Project UIDB/04436/2020 and UIDP/04436/2020; Infrastructures Micro&NanoFabs@PT, NORTE-01-0145-FEDER-022090, Portugal 2020; and MPhotonBiopsy, PTDC/FIS-OTI/1259/2020.Multidisciplinary Digital Publishing Institute (MDPI)Universidade do MinhoCunha, Florival MouraSilva, Manuel F.Gomes, Nuno M.Correia, J. H.2023-03-172023-03-17T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/1822/86765engCunha, F.M.; Silva, M.F.; Gomes, N.M.; Correia, J.H. Al2O3 Ultra-Thin Films Deposited by PEALD for Rubidium Optically Pumped Atomic Magnetometers with On-Chip Photodiode. Coatings 2023, 13, 638. https://doi.org/10.3390/coatings130306382079-641210.3390/coatings13030638638https://www.mdpi.com/2079-6412/13/3/638info:eu-repo/semantics/openAccessreponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiainstacron:RCAAP2024-05-11T07:10:50Zoai:repositorium.sdum.uminho.pt:1822/86765Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireinfo@rcaap.ptopendoar:https://opendoar.ac.uk/repository/71602025-05-28T16:18:13.497967Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) - FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiafalse
dc.title.none.fl_str_mv Al2O3 ultra-thin films deposited by PEALD for rubidium optically pumped atomic magnetometers with on-chip photodiode
title Al2O3 ultra-thin films deposited by PEALD for rubidium optically pumped atomic magnetometers with on-chip photodiode
spellingShingle Al2O3 ultra-thin films deposited by PEALD for rubidium optically pumped atomic magnetometers with on-chip photodiode
Cunha, Florival Moura
Optically pumped atomic magnetometers (OPMs)
Atomic layer deposition (ALD)
Ultra-thin films
Al2O3
Plasma-enhanced atomic layer deposition (PEALD)
Trimethylaluminum (TMA)
Al O 2 3
Science & Technology
title_short Al2O3 ultra-thin films deposited by PEALD for rubidium optically pumped atomic magnetometers with on-chip photodiode
title_full Al2O3 ultra-thin films deposited by PEALD for rubidium optically pumped atomic magnetometers with on-chip photodiode
title_fullStr Al2O3 ultra-thin films deposited by PEALD for rubidium optically pumped atomic magnetometers with on-chip photodiode
title_full_unstemmed Al2O3 ultra-thin films deposited by PEALD for rubidium optically pumped atomic magnetometers with on-chip photodiode
title_sort Al2O3 ultra-thin films deposited by PEALD for rubidium optically pumped atomic magnetometers with on-chip photodiode
author Cunha, Florival Moura
author_facet Cunha, Florival Moura
Silva, Manuel F.
Gomes, Nuno M.
Correia, J. H.
author_role author
author2 Silva, Manuel F.
Gomes, Nuno M.
Correia, J. H.
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidade do Minho
dc.contributor.author.fl_str_mv Cunha, Florival Moura
Silva, Manuel F.
Gomes, Nuno M.
Correia, J. H.
dc.subject.por.fl_str_mv Optically pumped atomic magnetometers (OPMs)
Atomic layer deposition (ALD)
Ultra-thin films
Al2O3
Plasma-enhanced atomic layer deposition (PEALD)
Trimethylaluminum (TMA)
Al O 2 3
Science & Technology
topic Optically pumped atomic magnetometers (OPMs)
Atomic layer deposition (ALD)
Ultra-thin films
Al2O3
Plasma-enhanced atomic layer deposition (PEALD)
Trimethylaluminum (TMA)
Al O 2 3
Science & Technology
description This communication shows the recipe for plasma-enhanced atomic layer deposition (PEALD) Al<sub>2</sub>O<sub>3</sub> ultra-thin films with thicknesses below 40 nm. Al<sub>2</sub>O<sub>3</sub> ultra-thin films were deposited by PEALD to improve the rubidium optically pumped atomic magnetometers’ (OPMs) cell lifetime. This requirement is due to the consumption of the alkali metal (rubidium) inside the vapor cells. Moreover, as a silicon wafer was used, an on-chip photodiode was already integrated into the fabrication of the OPM. The ALD parameters were achieved with a GPC close to 1.2 Å/cycle and the ALD window threshold at 250 °C. The PEALD Al<sub>2</sub>O<sub>3</sub> ultra-thin films showed a refractive index of 1.55 at 795 nm (tuned to the D1 transition of rubidium for spin-polarization of the atoms). The EDS chemical elemental analysis showed an atomic percentage of 58.65% for oxygen (O) and 41.35% for aluminum (Al), with a mass percentage of 45.69% for O and 54.31% for Al. A sensitive XPS surface elemental composition confirmed the formation of the PEALD Al<sub>2</sub>O<sub>3</sub> ultra-thin film with an Al 2s peak at 119.2 eV, Al 2p peak at 74.4 eV, and was oxygen rich. The SEM analysis presented a non-uniformity of around 3%. Finally, the rubidium consumption in the coated OPM was monitored. Therefore, PEALD Al<sub>2</sub>O<sub>3</sub> ultra-thin films were deposited while controlling their optical refractive index, crystalline properties, void fraction, surface roughness and thickness uniformity (on OPM volume 1 mm × 1 mm × 0.180 mm cavity etched by RIE), as well as the chemical composition for improving the rubidium OPM lifetime.
publishDate 2023
dc.date.none.fl_str_mv 2023-03-17
2023-03-17T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv https://hdl.handle.net/1822/86765
url https://hdl.handle.net/1822/86765
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Cunha, F.M.; Silva, M.F.; Gomes, N.M.; Correia, J.H. Al2O3 Ultra-Thin Films Deposited by PEALD for Rubidium Optically Pumped Atomic Magnetometers with On-Chip Photodiode. Coatings 2023, 13, 638. https://doi.org/10.3390/coatings13030638
2079-6412
10.3390/coatings13030638
638
https://www.mdpi.com/2079-6412/13/3/638
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Multidisciplinary Digital Publishing Institute (MDPI)
publisher.none.fl_str_mv Multidisciplinary Digital Publishing Institute (MDPI)
dc.source.none.fl_str_mv reponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
instacron:RCAAP
instname_str FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
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institution RCAAP
reponame_str Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
collection Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
repository.name.fl_str_mv Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) - FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
repository.mail.fl_str_mv info@rcaap.pt
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