A review on the progress of optoelectronic devices based on TiO2 thin films and nanomaterials

• Main Author: Ge, Shunhao
• Publication Date: 2023
• Other Authors: Sang, Dandan, Zou, Liangrui, Yao, Yu, Zhou, Chuandong, Fu, Hailong, Xi, Hongzhu, Fan, Jianchao, Meng, Lijian, Wang, Cong
• Format: Article
• Language: eng
• Source: Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
• Download full: http://hdl.handle.net/10400.22/25426
• topic: TiO2; Optoelectronic devices; Heterojunction; Nanomaterial

Titanium dioxide (TiO2) is a kind of wide-bandgap semiconductor. Nano-TiO2 devices exhibit size-dependent and novel photoelectric performance due to their quantum limiting effect, high absorption coefficient, high surface-volume ratio, adjustable band gap, etc. Due to their excellent electronic performance, abundant presence, and high cost performance, they are widely used in various application fields such as memory, sensors, and photodiodes. This article provides an overview of the most recent developments in the application of nanostructured TiO2-based optoelectronic devices. Various complex devices are considered, such as sensors, photodetectors, light-emitting diodes (LEDs), storage applications, and field-effect transistors (FETs). This review of recent discoveries in TiO2-based optoelectronic devices, along with summary reviews and predictions, has important implications for the development of transitional metal oxides in optoelectronic applications for researchers.