The oxidation behaviour of mixed tungsten silicon sputtered coatings

Bibliographic Details
Main Author: Louro, C.
Publication Date: 1999
Other Authors: Cavaleiro, A.
Format: Article
Language: eng
Source: Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
Download full: https://hdl.handle.net/10316/4321
https://doi.org/10.1016/S0040-6090(98)01568-5
Summary: W-Si-N coatings were deposited by sputtering and their chemical composition, structure, thermal and oxidation behaviour were characterised. Si-containing films are essentially amorphous. W69Si31 film crystallises at 750 °C as [alpha]-W and W5Si3 phases whereas no significant structural transformations were observed for W24Si21N55 film up to 1000 °C, In both cases elemental diffusion (Si and N) for the substrate was detected after thermal annealing. These coatings present much better oxidation resistance than W and W45N55 coatings.
id RCAP_58372c8fa3795bd87a196889865dce1c
oai_identifier_str oai:estudogeral.uc.pt:10316/4321
network_acronym_str RCAP
network_name_str Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
repository_id_str https://opendoar.ac.uk/repository/7160
spelling The oxidation behaviour of mixed tungsten silicon sputtered coatingsOxidation resistanceSuicidesW-Si-N filmsTungsten silicideSputteringW-Si-N coatings were deposited by sputtering and their chemical composition, structure, thermal and oxidation behaviour were characterised. Si-containing films are essentially amorphous. W69Si31 film crystallises at 750 °C as [alpha]-W and W5Si3 phases whereas no significant structural transformations were observed for W24Si21N55 film up to 1000 °C, In both cases elemental diffusion (Si and N) for the substrate was detected after thermal annealing. These coatings present much better oxidation resistance than W and W45N55 coatings.http://www.sciencedirect.com/science/article/B6TW0-3Y6PSMH-21/1/4bbc4e5d0073b4d83d325b3e19383dd01999info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleaplication/PDFhttps://hdl.handle.net/10316/4321https://hdl.handle.net/10316/4321https://doi.org/10.1016/S0040-6090(98)01568-5engThin Solid Films. 343-344:(1999) 51-56Louro, C.Cavaleiro, A.info:eu-repo/semantics/openAccessreponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiainstacron:RCAAP2022-07-28T13:41:38Zoai:estudogeral.uc.pt:10316/4321Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireinfo@rcaap.ptopendoar:https://opendoar.ac.uk/repository/71602025-05-29T05:19:34.002837Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) - FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiafalse
dc.title.none.fl_str_mv The oxidation behaviour of mixed tungsten silicon sputtered coatings
title The oxidation behaviour of mixed tungsten silicon sputtered coatings
spellingShingle The oxidation behaviour of mixed tungsten silicon sputtered coatings
Louro, C.
Oxidation resistance
Suicides
W-Si-N films
Tungsten silicide
Sputtering
title_short The oxidation behaviour of mixed tungsten silicon sputtered coatings
title_full The oxidation behaviour of mixed tungsten silicon sputtered coatings
title_fullStr The oxidation behaviour of mixed tungsten silicon sputtered coatings
title_full_unstemmed The oxidation behaviour of mixed tungsten silicon sputtered coatings
title_sort The oxidation behaviour of mixed tungsten silicon sputtered coatings
author Louro, C.
author_facet Louro, C.
Cavaleiro, A.
author_role author
author2 Cavaleiro, A.
author2_role author
dc.contributor.author.fl_str_mv Louro, C.
Cavaleiro, A.
dc.subject.por.fl_str_mv Oxidation resistance
Suicides
W-Si-N films
Tungsten silicide
Sputtering
topic Oxidation resistance
Suicides
W-Si-N films
Tungsten silicide
Sputtering
description W-Si-N coatings were deposited by sputtering and their chemical composition, structure, thermal and oxidation behaviour were characterised. Si-containing films are essentially amorphous. W69Si31 film crystallises at 750 °C as [alpha]-W and W5Si3 phases whereas no significant structural transformations were observed for W24Si21N55 film up to 1000 °C, In both cases elemental diffusion (Si and N) for the substrate was detected after thermal annealing. These coatings present much better oxidation resistance than W and W45N55 coatings.
publishDate 1999
dc.date.none.fl_str_mv 1999
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv https://hdl.handle.net/10316/4321
https://hdl.handle.net/10316/4321
https://doi.org/10.1016/S0040-6090(98)01568-5
url https://hdl.handle.net/10316/4321
https://doi.org/10.1016/S0040-6090(98)01568-5
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Thin Solid Films. 343-344:(1999) 51-56
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv aplication/PDF
dc.source.none.fl_str_mv reponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
instacron:RCAAP
instname_str FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
instacron_str RCAAP
institution RCAAP
reponame_str Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
collection Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
repository.name.fl_str_mv Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) - FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
repository.mail.fl_str_mv info@rcaap.pt
_version_ 1833602320576806912

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