Boosting Electrical Performance of High-κ Nanomultilayer Dielectrics and Electronic Devices by Combining Solution Combustion Synthesis and UV Irradiation

Bibliographic Details
Main Author: Carlos, Emanuel
Publication Date: 2017
Other Authors: Branquinho, Rita, Kiazadeh, Asal, Martins, Jorge, Barquinha, Pedro, Martins, Rodrigo, Fortunato, Elvira
Format: Article
Language: eng
Source: Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
Download full: https://doi.org/10.1021/acsami.7b11752
Summary: Grant SFRH/BPD/99136/2013 Grant SFRH/BD/122286/2016 Grant SFRH/BD/116047/2016 IDS-FunMat-INNO project FPA2016/EIT/EIT RawMaterials Grant Agreement 15015.
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spelling Boosting Electrical Performance of High-κ Nanomultilayer Dielectrics and Electronic Devices by Combining Solution Combustion Synthesis and UV IrradiationDUV irradiationlow operating voltage TFTslow temperaturenanomultilayer dielectric oxides (AlO and HfO)solution combustion synthesisMaterials Science(all)Grant SFRH/BPD/99136/2013 Grant SFRH/BD/122286/2016 Grant SFRH/BD/116047/2016 IDS-FunMat-INNO project FPA2016/EIT/EIT RawMaterials Grant Agreement 15015.In the past decade, solution-based dielectric oxides have been widely studied in electronic applications enabling the use of low-cost processing technologies and device improvement. The most promising are the high-κ dielectrics, like aluminum (AlOx) and hafnium oxide (HfOx), that allow an easier trap filling in the semiconductor and the use of low operation voltage. However, in the case of HfOx, a high temperature usually is needed to induce a uniform and condensed film, which limits its applications in flexible electronics. This paper describes how to obtain HfOx dielectric thin films and the effect of their implementation in multilayer dielectrics (MLD) at low temperatures (150 °C) to apply in thin film transistors (TFTs) using the combination of solution combustion synthesis (SCS) and ultraviolet (UV) treatment. The single layers and multilayers did not show any trace of residual organics and exhibited a small surface roughness (<1.2 nm) and a high breakdown voltage (>2.7 MV·cm-1). The resulting TFTs presented a high performance at a low operation voltage (<3 V), with high saturation mobility (43.9 ± 1.1 cm2·V-1·s-1), a small subthreshold slope (0.066 ± 0.010 V·dec-1), current ratio of 1 × 106 and a good idle shelf life stability after 2 months. To our knowledge, the results achieved surpass the actual state-of-the-art. Finally, we demonstrated a low-voltage diode-connected inverter using MLD/IGZO TFTs working with a maximum gain of 1 at 2 V.UNINOVA-Instituto de Desenvolvimento de Novas TecnologiasCENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)DCM - Departamento de Ciência dos MateriaisRUNCarlos, EmanuelBranquinho, RitaKiazadeh, AsalMartins, JorgeBarquinha, PedroMartins, RodrigoFortunato, Elvira2019-06-04T22:21:04Z2017-11-222017-11-22T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article10application/pdfhttps://doi.org/10.1021/acsami.7b11752eng1944-8244PURE: 3801567http://www.scopus.com/inward/record.url?scp=85035075814&partnerID=8YFLogxKhttps://doi.org/10.1021/acsami.7b11752info:eu-repo/semantics/openAccessreponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiainstacron:RCAAP2024-05-22T17:39:51Zoai:run.unl.pt:10362/71733Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireinfo@rcaap.ptopendoar:https://opendoar.ac.uk/repository/71602025-05-28T17:10:58.797992Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) - FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiafalse
dc.title.none.fl_str_mv Boosting Electrical Performance of High-κ Nanomultilayer Dielectrics and Electronic Devices by Combining Solution Combustion Synthesis and UV Irradiation
title Boosting Electrical Performance of High-κ Nanomultilayer Dielectrics and Electronic Devices by Combining Solution Combustion Synthesis and UV Irradiation
spellingShingle Boosting Electrical Performance of High-κ Nanomultilayer Dielectrics and Electronic Devices by Combining Solution Combustion Synthesis and UV Irradiation
Carlos, Emanuel
DUV irradiation
low operating voltage TFTs
low temperature
nanomultilayer dielectric oxides (AlO and HfO)
solution combustion synthesis
Materials Science(all)
title_short Boosting Electrical Performance of High-κ Nanomultilayer Dielectrics and Electronic Devices by Combining Solution Combustion Synthesis and UV Irradiation
title_full Boosting Electrical Performance of High-κ Nanomultilayer Dielectrics and Electronic Devices by Combining Solution Combustion Synthesis and UV Irradiation
title_fullStr Boosting Electrical Performance of High-κ Nanomultilayer Dielectrics and Electronic Devices by Combining Solution Combustion Synthesis and UV Irradiation
title_full_unstemmed Boosting Electrical Performance of High-κ Nanomultilayer Dielectrics and Electronic Devices by Combining Solution Combustion Synthesis and UV Irradiation
title_sort Boosting Electrical Performance of High-κ Nanomultilayer Dielectrics and Electronic Devices by Combining Solution Combustion Synthesis and UV Irradiation
author Carlos, Emanuel
author_facet Carlos, Emanuel
Branquinho, Rita
Kiazadeh, Asal
Martins, Jorge
Barquinha, Pedro
Martins, Rodrigo
Fortunato, Elvira
author_role author
author2 Branquinho, Rita
Kiazadeh, Asal
Martins, Jorge
Barquinha, Pedro
Martins, Rodrigo
Fortunato, Elvira
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias
CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)
DCM - Departamento de Ciência dos Materiais
RUN
dc.contributor.author.fl_str_mv Carlos, Emanuel
Branquinho, Rita
Kiazadeh, Asal
Martins, Jorge
Barquinha, Pedro
Martins, Rodrigo
Fortunato, Elvira
dc.subject.por.fl_str_mv DUV irradiation
low operating voltage TFTs
low temperature
nanomultilayer dielectric oxides (AlO and HfO)
solution combustion synthesis
Materials Science(all)
topic DUV irradiation
low operating voltage TFTs
low temperature
nanomultilayer dielectric oxides (AlO and HfO)
solution combustion synthesis
Materials Science(all)
description Grant SFRH/BPD/99136/2013 Grant SFRH/BD/122286/2016 Grant SFRH/BD/116047/2016 IDS-FunMat-INNO project FPA2016/EIT/EIT RawMaterials Grant Agreement 15015.
publishDate 2017
dc.date.none.fl_str_mv 2017-11-22
2017-11-22T00:00:00Z
2019-06-04T22:21:04Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv https://doi.org/10.1021/acsami.7b11752
url https://doi.org/10.1021/acsami.7b11752
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 1944-8244
PURE: 3801567
http://www.scopus.com/inward/record.url?scp=85035075814&partnerID=8YFLogxK
https://doi.org/10.1021/acsami.7b11752
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 10
application/pdf
dc.source.none.fl_str_mv reponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
instacron:RCAAP
instname_str FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
instacron_str RCAAP
institution RCAAP
reponame_str Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
collection Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
repository.name.fl_str_mv Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) - FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
repository.mail.fl_str_mv info@rcaap.pt
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