A microdevice in a submicron CMOS for closed-loop deep-brain stimulation (CLDBS)

• Autor(a) principal: Nordi, Thiago Mateus
• Data de Publicação: 2024
• Outros Autores: Gounella, Rodrigo, Amorim, Marcio L. M., Luppe, Maximillam, Junior, João Navarro Soares, Afonso, João L., Monteiro, Vítor Duarte Fernandes, Afonso, José A., Fonoff, Erich Talamoni, Colombari, Eduardo, Carmo, João Paulo Pereira
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
• Texto Completo: https://hdl.handle.net/1822/93589
• topic: Closed-loop deep-brain stimulation; Low-noise amplifier; Neurostimulation; Implantable devices; Engenharia e Tecnologia::Engenharia Eletrotécnica, Eletrónica e Informática; Saúde de qualidade

Deep-brain stimulation (DBS) is a highly effective and safe medical treatment that improves the lives of patients with a wide range of neurological and psychiatric diseases. It has been established as a first-line tool in the treatment of these conditions for the past two decades. Closed-loop deep-brain stimulation (CLDBS) advances this tool further by automatically adjusting the stimulation parameters in real time based on the brain’s response. In this context, this paper presents a low-noise amplifier (LNA) and a neurostimulator circuit fabricated using the low-power/low-voltage 65 nm CMOS process from TSMC. The circuits are specifically designed for implantable applications. To achieve the best tradeoff between input-referred noise and power consumption, metaheuristic algorithms were employed to determine and optimize the dimensions of the LNA devices during the design phase. Measurement results showed that the LNA had a gain of 41.2 dB; a 3 dB bandwidth spanning over three decades, from 1.5 Hz to 11.5 kHz; a power consumption of 5.9 µW; and an input-referred noise of 3.45 µVRMS, from 200 Hz to 11.5 kHz. The neurostimulator circuit is a programmable Howland current pump. Measurements have shown its capability to generate currents with arbitrary shapes and ranging from −325 µA to +318 µA. Simulations indicated a quiescent power consumption of 0.13 µW, with zero neurostimulation current. Both the LNA and the neurostimulator circuits are supplied with a 1.2 V voltage and occupy a microdevice area of 145 µm × 311 µm and 88 µm × 89 µm, respectively, making them suitable for implantation in applications involving closed-loop deep-brain stimulation.