Dielectric multilayers impact on radiation-induced charge accumulation in highly sensitive oxide field effect transistors

Bibliographic Details
Main Author: Bordoni, Camilla
Publication Date: 2024
Other Authors: Ciavatti, Andrea, Cortinhal, Mariana, Pereira, Maria, Cramer, Tobias, Barquinha, Pedro, Fraboni, Beatrice
Format: Article
Language: eng
Source: Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
Download full: http://hdl.handle.net/10362/172490
Summary: Funding Information: The authors acknowledge the funding by the EU—NextGenerationEU—with funds made available by the National Recovery and Resilience Plan (NRRP) Mission 4, Component 1, Investment 4.1 (MD 351/2022)—NRRP Research. This work also received funding from the European Community’s Horizon Europe program (ERC-POC FLETRAD, Grant Agreement No. 101082283) and from National Funds through the FCT —Fundação para a Ciência e a Tecnologia, I.P.), Project Nos. LA/P/0037/2020, UIDP/50025/2020, and UIDB/50025/2020 of the Institute of Nanostructures, Nanomodelling and Nanofabrication—i3N. We would also like to acknowledge the Portuguese Foundation for Science and Technology, under the scope of doctoral Grant Nos. DFA/BD/8335/2020 and 2022.09516.BD, for the support. Publisher Copyright: © 2024 Author(s).
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spelling Dielectric multilayers impact on radiation-induced charge accumulation in highly sensitive oxide field effect transistorsMaterials Science(all)Engineering(all)Funding Information: The authors acknowledge the funding by the EU—NextGenerationEU—with funds made available by the National Recovery and Resilience Plan (NRRP) Mission 4, Component 1, Investment 4.1 (MD 351/2022)—NRRP Research. This work also received funding from the European Community’s Horizon Europe program (ERC-POC FLETRAD, Grant Agreement No. 101082283) and from National Funds through the FCT —Fundação para a Ciência e a Tecnologia, I.P.), Project Nos. LA/P/0037/2020, UIDP/50025/2020, and UIDB/50025/2020 of the Institute of Nanostructures, Nanomodelling and Nanofabrication—i3N. We would also like to acknowledge the Portuguese Foundation for Science and Technology, under the scope of doctoral Grant Nos. DFA/BD/8335/2020 and 2022.09516.BD, for the support. Publisher Copyright: © 2024 Author(s).Radiation dosimetry is crucial in many fields where the exposure to ionizing radiation must be precisely controlled to avoid health and environmental safety issues. Among solid state detectors, we recently demonstrated that Radiation sensitive OXide Field Effect Transistors (ROXFETs) are excellent candidates for personal dosimetry thanks to their fast response and high sensitivity to x rays. These transistors use indium-gallium-zinc oxide as a semiconductor, combined with a dielectric based on high-permittivity and high-atomic number materials. Here, we present a study on the ROXFET gate dielectric fabricated by atomic layer deposition, where we compare single- and multi-layer structures to determine the best-performing configuration. All the devices show stable operational parameters and high reproducibility among different detectors. We identified an optimized bi-layer dielectric structure made of tantalum oxide and aluminum oxide, which demonstrated a sensitivity of (63 ± 2) V/Gy, an order of magnitude larger than previously reported values. To explain our findings, we propose a model identifying the relevant charge accumulation and recombination processes leading to the large observed transistor threshold voltage shift under ionizing radiation, i.e., of the parameter that directly defines the sensitivity of the device.CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)DCM - Departamento de Ciência dos MateriaisUNINOVA-Instituto de Desenvolvimento de Novas TecnologiasRUNBordoni, CamillaCiavatti, AndreaCortinhal, MarianaPereira, MariaCramer, TobiasBarquinha, PedroFraboni, Beatrice2024-09-26T22:25:58Z2024-032024-03-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article8application/pdfhttp://hdl.handle.net/10362/172490eng2166-532XPURE: 99744644https://doi.org/10.1063/5.0189167info:eu-repo/semantics/openAccessreponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiainstacron:RCAAP2024-09-30T01:44:17Zoai:run.unl.pt:10362/172490Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireinfo@rcaap.ptopendoar:https://opendoar.ac.uk/repository/71602025-05-28T18:54:26.363505Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) - FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiafalse
dc.title.none.fl_str_mv Dielectric multilayers impact on radiation-induced charge accumulation in highly sensitive oxide field effect transistors
title Dielectric multilayers impact on radiation-induced charge accumulation in highly sensitive oxide field effect transistors
spellingShingle Dielectric multilayers impact on radiation-induced charge accumulation in highly sensitive oxide field effect transistors
Bordoni, Camilla
Materials Science(all)
Engineering(all)
title_short Dielectric multilayers impact on radiation-induced charge accumulation in highly sensitive oxide field effect transistors
title_full Dielectric multilayers impact on radiation-induced charge accumulation in highly sensitive oxide field effect transistors
title_fullStr Dielectric multilayers impact on radiation-induced charge accumulation in highly sensitive oxide field effect transistors
title_full_unstemmed Dielectric multilayers impact on radiation-induced charge accumulation in highly sensitive oxide field effect transistors
title_sort Dielectric multilayers impact on radiation-induced charge accumulation in highly sensitive oxide field effect transistors
author Bordoni, Camilla
author_facet Bordoni, Camilla
Ciavatti, Andrea
Cortinhal, Mariana
Pereira, Maria
Cramer, Tobias
Barquinha, Pedro
Fraboni, Beatrice
author_role author
author2 Ciavatti, Andrea
Cortinhal, Mariana
Pereira, Maria
Cramer, Tobias
Barquinha, Pedro
Fraboni, Beatrice
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)
DCM - Departamento de Ciência dos Materiais
UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias
RUN
dc.contributor.author.fl_str_mv Bordoni, Camilla
Ciavatti, Andrea
Cortinhal, Mariana
Pereira, Maria
Cramer, Tobias
Barquinha, Pedro
Fraboni, Beatrice
dc.subject.por.fl_str_mv Materials Science(all)
Engineering(all)
topic Materials Science(all)
Engineering(all)
description Funding Information: The authors acknowledge the funding by the EU—NextGenerationEU—with funds made available by the National Recovery and Resilience Plan (NRRP) Mission 4, Component 1, Investment 4.1 (MD 351/2022)—NRRP Research. This work also received funding from the European Community’s Horizon Europe program (ERC-POC FLETRAD, Grant Agreement No. 101082283) and from National Funds through the FCT —Fundação para a Ciência e a Tecnologia, I.P.), Project Nos. LA/P/0037/2020, UIDP/50025/2020, and UIDB/50025/2020 of the Institute of Nanostructures, Nanomodelling and Nanofabrication—i3N. We would also like to acknowledge the Portuguese Foundation for Science and Technology, under the scope of doctoral Grant Nos. DFA/BD/8335/2020 and 2022.09516.BD, for the support. Publisher Copyright: © 2024 Author(s).
publishDate 2024
dc.date.none.fl_str_mv 2024-09-26T22:25:58Z
2024-03
2024-03-01T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10362/172490
url http://hdl.handle.net/10362/172490
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2166-532X
PURE: 99744644
https://doi.org/10.1063/5.0189167
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 8
application/pdf
dc.source.none.fl_str_mv reponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
instacron:RCAAP
instname_str FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
instacron_str RCAAP
institution RCAAP
reponame_str Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
collection Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
repository.name.fl_str_mv Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) - FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
repository.mail.fl_str_mv info@rcaap.pt
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