A 3-phase model for VIS/NIR mu C-Si : H p-i-n detectors

• Autor(a) principal: Vieira, Manuela
• Data de Publicação: 2000
• Outros Autores: Fantoni, Alessandro, Fernandes, Miguel, Maçarico, António Filipe Ruas Trindade, Schwarz, R.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
• Texto Completo: http://hdl.handle.net/10400.21/1333
• topic: Photodetector; Mu c-p-i-n devices; Photocurrent; Spectral response; Collection efficiency; Simulation

The spectral response and the photocurrent delivered by entirely microcrystalline p-i-n-Si:H detectors an analysed under different applied bias and light illumination conditions. The spectral response and the internal collection depend not only on the energy range but also on the illumination side. Under [p]- and [n]-side irradiation, the internal collection characteristics have an atypical shape. It is high for applied bias and lower than the open circuit voltage, shows a steep decrease near the open circuit voltage (higher under [n]-side illumination) and levels off for higher voltages. Additionally, the numerical modeling of the VIS/NIR detector, based on the band discontinuities near the grain boundaries and interfaces, complements the study and gives insight into the internal physical process.