Temperature dependence of the first order Raman scattering in thin films of mc-Si:H

Detalhes bibliográficos
Autor(a) principal: Cerqueira, M. F.
Data de Publicação: 1999
Outros Autores: Ferreira, J. A.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
Texto Completo: https://hdl.handle.net/1822/13771
Resumo: The temperature effect on microcrystalline silicon (mc-Si:H) films produced by R.F. magnetron sputtering has been studied by Raman spectroscopy. The thermal behaviour of mc-Si:H films and crystalline silicon is compared and interpreted on the basis of anharmonic effects. We have studied the first order Raman spectra of our films for several Ar+ laser powers. Our results show a blue shift and a broadening of the Raman spectra with increasing the laser power. This effect is not due to structural changes since it is reproducible. The sample temperature has been calculated according to the well known relation between Stokes and anti-Stokes components. Our results show that the temperature effect is stronger in mc-Si:H than in crystalline silicon. This difference can be attributed to the size of the microcrystals, which are imbedded in a amorphous matrix surrounded by a third phase called grain boundary.
id RCAP_0b3cc13f8c3e7e4d2f2e92f1cf14e921
oai_identifier_str oai:repositorium.sdum.uminho.pt:1822/13771
network_acronym_str RCAP
network_name_str Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
repository_id_str https://opendoar.ac.uk/repository/7160
spelling Temperature dependence of the first order Raman scattering in thin films of mc-Si:HMicrocrystalline siliconAnharmonic effectsRaman scatteringScience & TechnologyThe temperature effect on microcrystalline silicon (mc-Si:H) films produced by R.F. magnetron sputtering has been studied by Raman spectroscopy. The thermal behaviour of mc-Si:H films and crystalline silicon is compared and interpreted on the basis of anharmonic effects. We have studied the first order Raman spectra of our films for several Ar+ laser powers. Our results show a blue shift and a broadening of the Raman spectra with increasing the laser power. This effect is not due to structural changes since it is reproducible. The sample temperature has been calculated according to the well known relation between Stokes and anti-Stokes components. Our results show that the temperature effect is stronger in mc-Si:H than in crystalline silicon. This difference can be attributed to the size of the microcrystals, which are imbedded in a amorphous matrix surrounded by a third phase called grain boundary.ElsevierUniversidade do MinhoCerqueira, M. F.Ferreira, J. A.19991999-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/1822/13771eng0924-013610.1016/S0924-0136(99)00152-1http://www.sciencedirect.com/science/article/pii/S0924013699001521info:eu-repo/semantics/openAccessreponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiainstacron:RCAAP2025-04-12T04:57:36Zoai:repositorium.sdum.uminho.pt:1822/13771Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireinfo@rcaap.ptopendoar:https://opendoar.ac.uk/repository/71602025-05-28T15:50:01.267615Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) - FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiafalse
dc.title.none.fl_str_mv Temperature dependence of the first order Raman scattering in thin films of mc-Si:H
title Temperature dependence of the first order Raman scattering in thin films of mc-Si:H
spellingShingle Temperature dependence of the first order Raman scattering in thin films of mc-Si:H
Cerqueira, M. F.
Microcrystalline silicon
Anharmonic effects
Raman scattering
Science & Technology
title_short Temperature dependence of the first order Raman scattering in thin films of mc-Si:H
title_full Temperature dependence of the first order Raman scattering in thin films of mc-Si:H
title_fullStr Temperature dependence of the first order Raman scattering in thin films of mc-Si:H
title_full_unstemmed Temperature dependence of the first order Raman scattering in thin films of mc-Si:H
title_sort Temperature dependence of the first order Raman scattering in thin films of mc-Si:H
author Cerqueira, M. F.
author_facet Cerqueira, M. F.
Ferreira, J. A.
author_role author
author2 Ferreira, J. A.
author2_role author
dc.contributor.none.fl_str_mv Universidade do Minho
dc.contributor.author.fl_str_mv Cerqueira, M. F.
Ferreira, J. A.
dc.subject.por.fl_str_mv Microcrystalline silicon
Anharmonic effects
Raman scattering
Science & Technology
topic Microcrystalline silicon
Anharmonic effects
Raman scattering
Science & Technology
description The temperature effect on microcrystalline silicon (mc-Si:H) films produced by R.F. magnetron sputtering has been studied by Raman spectroscopy. The thermal behaviour of mc-Si:H films and crystalline silicon is compared and interpreted on the basis of anharmonic effects. We have studied the first order Raman spectra of our films for several Ar+ laser powers. Our results show a blue shift and a broadening of the Raman spectra with increasing the laser power. This effect is not due to structural changes since it is reproducible. The sample temperature has been calculated according to the well known relation between Stokes and anti-Stokes components. Our results show that the temperature effect is stronger in mc-Si:H than in crystalline silicon. This difference can be attributed to the size of the microcrystals, which are imbedded in a amorphous matrix surrounded by a third phase called grain boundary.
publishDate 1999
dc.date.none.fl_str_mv 1999
1999-01-01T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv https://hdl.handle.net/1822/13771
url https://hdl.handle.net/1822/13771
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 0924-0136
10.1016/S0924-0136(99)00152-1
http://www.sciencedirect.com/science/article/pii/S0924013699001521
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
instacron:RCAAP
instname_str FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
instacron_str RCAAP
institution RCAAP
reponame_str Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
collection Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
repository.name.fl_str_mv Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) - FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
repository.mail.fl_str_mv info@rcaap.pt
_version_ 1833595566766948352

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