Characterization of Al2O3 and SiO2 ultra thin-films deposited by ALD for microfabricated rubidium vapor cells

Detalhes bibliográficos
Autor(a) principal: Cunha, Florival Moura
Data de Publicação: 2022
Outros Autores: Silva, Manuel Fernando Ribeiro, Correia, J. H.
Idioma: eng
Título da fonte: Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
Texto Completo: https://hdl.handle.net/1822/89644
Resumo: The Atomic Layer Deposition (ALD) technique can be used to increase the lifetime of microfabricated rubidium vapor cells (magnetic sensors for magnetoencephalography) by an ultra-thin coating layer deposited on the internal cell walls (Figure 1). The ALD presents excellent control over the ultra thin films thickness (< 20 nm) and allows complex 3D structures to be covered with a high-aspect-ratio coating. This work shows the characterization of alumina (Al2O3) and silicon dioxide (SiO2) ultra-thin films deposited by Thermal ALD (ThALD) and Plasma-Enhanced ALD (PEALD).
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spelling Characterization of Al2O3 and SiO2 ultra thin-films deposited by ALD for microfabricated rubidium vapor cellsAtomic Layer DepositionALDAl2O3SiO2Thin-filmsEngenharia e Tecnologia::Engenharia Eletrotécnica, Eletrónica e InformáticaThe Atomic Layer Deposition (ALD) technique can be used to increase the lifetime of microfabricated rubidium vapor cells (magnetic sensors for magnetoencephalography) by an ultra-thin coating layer deposited on the internal cell walls (Figure 1). The ALD presents excellent control over the ultra thin films thickness (< 20 nm) and allows complex 3D structures to be covered with a high-aspect-ratio coating. This work shows the characterization of alumina (Al2O3) and silicon dioxide (SiO2) ultra-thin films deposited by Thermal ALD (ThALD) and Plasma-Enhanced ALD (PEALD).This work was supported by: project MME and FCT with the project MPhotonBiopsy, PTDC/FIS-OTI/1259/2020, Infrastructures Micro&NanoFabs@PT, reference NORTE-01-0145-FEDER-022090, POR Norte, Portugal 2020.Universidade do MinhoCunha, Florival MouraSilva, Manuel Fernando RibeiroCorreia, J. H.2022-09-072022-09-07T00:00:00Zconference posterinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://hdl.handle.net/1822/89644enginfo:eu-repo/semantics/openAccessreponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiainstacron:RCAAP2024-05-11T06:16:34Zoai:repositorium.sdum.uminho.pt:1822/89644Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireinfo@rcaap.ptopendoar:https://opendoar.ac.uk/repository/71602025-05-28T15:47:22.407132Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) - FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologiafalse
dc.title.none.fl_str_mv Characterization of Al2O3 and SiO2 ultra thin-films deposited by ALD for microfabricated rubidium vapor cells
title Characterization of Al2O3 and SiO2 ultra thin-films deposited by ALD for microfabricated rubidium vapor cells
spellingShingle Characterization of Al2O3 and SiO2 ultra thin-films deposited by ALD for microfabricated rubidium vapor cells
Cunha, Florival Moura
Atomic Layer Deposition
ALD
Al2O3
SiO2
Thin-films
Engenharia e Tecnologia::Engenharia Eletrotécnica, Eletrónica e Informática
title_short Characterization of Al2O3 and SiO2 ultra thin-films deposited by ALD for microfabricated rubidium vapor cells
title_full Characterization of Al2O3 and SiO2 ultra thin-films deposited by ALD for microfabricated rubidium vapor cells
title_fullStr Characterization of Al2O3 and SiO2 ultra thin-films deposited by ALD for microfabricated rubidium vapor cells
title_full_unstemmed Characterization of Al2O3 and SiO2 ultra thin-films deposited by ALD for microfabricated rubidium vapor cells
title_sort Characterization of Al2O3 and SiO2 ultra thin-films deposited by ALD for microfabricated rubidium vapor cells
author Cunha, Florival Moura
author_facet Cunha, Florival Moura
Silva, Manuel Fernando Ribeiro
Correia, J. H.
author_role author
author2 Silva, Manuel Fernando Ribeiro
Correia, J. H.
author2_role author
author
dc.contributor.none.fl_str_mv Universidade do Minho
dc.contributor.author.fl_str_mv Cunha, Florival Moura
Silva, Manuel Fernando Ribeiro
Correia, J. H.
dc.subject.por.fl_str_mv Atomic Layer Deposition
ALD
Al2O3
SiO2
Thin-films
Engenharia e Tecnologia::Engenharia Eletrotécnica, Eletrónica e Informática
topic Atomic Layer Deposition
ALD
Al2O3
SiO2
Thin-films
Engenharia e Tecnologia::Engenharia Eletrotécnica, Eletrónica e Informática
description The Atomic Layer Deposition (ALD) technique can be used to increase the lifetime of microfabricated rubidium vapor cells (magnetic sensors for magnetoencephalography) by an ultra-thin coating layer deposited on the internal cell walls (Figure 1). The ALD presents excellent control over the ultra thin films thickness (< 20 nm) and allows complex 3D structures to be covered with a high-aspect-ratio coating. This work shows the characterization of alumina (Al2O3) and silicon dioxide (SiO2) ultra-thin films deposited by Thermal ALD (ThALD) and Plasma-Enhanced ALD (PEALD).
publishDate 2022
dc.date.none.fl_str_mv 2022-09-07
2022-09-07T00:00:00Z
dc.type.driver.fl_str_mv conference poster
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
status_str publishedVersion
dc.identifier.uri.fl_str_mv https://hdl.handle.net/1822/89644
url https://hdl.handle.net/1822/89644
dc.language.iso.fl_str_mv eng
language eng
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
instname:FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
instacron:RCAAP
instname_str FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
instacron_str RCAAP
institution RCAAP
reponame_str Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
collection Repositórios Científicos de Acesso Aberto de Portugal (RCAAP)
repository.name.fl_str_mv Repositórios Científicos de Acesso Aberto de Portugal (RCAAP) - FCCN, serviços digitais da FCT – Fundação para a Ciência e a Tecnologia
repository.mail.fl_str_mv info@rcaap.pt
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