Effect of impurities on the Raman scattering of 6H-SiC crystals
| Main Author: | |
|---|---|
| Publication Date: | 2012 |
| Other Authors: | , , |
| Format: | Article |
| Language: | eng |
| Source: | Materials research (São Carlos. Online) |
| Download full: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392012000600003 |
Summary: | Raman spectroscopy was applied to different-impurities-doped 6H-SiC crystals. It had been found that the first-order Raman spectra of N-, Al- and B-doped 6H-SiC were shifted to higher frequency when comparing with undoped samples. However, the first-order Raman spectra of V-doped sample was shifted to lower frequency, revealing that there existed low free carrier concentration, which might be induced by the deep energy level effect of V impurity. Meanwhile, the second-order Raman spectra are independent of polytype and impurity type. |
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Effect of impurities on the Raman scattering of 6H-SiC crystalsRaman scattering6H-SiCimpurityRaman spectroscopy was applied to different-impurities-doped 6H-SiC crystals. It had been found that the first-order Raman spectra of N-, Al- and B-doped 6H-SiC were shifted to higher frequency when comparing with undoped samples. However, the first-order Raman spectra of V-doped sample was shifted to lower frequency, revealing that there existed low free carrier concentration, which might be induced by the deep energy level effect of V impurity. Meanwhile, the second-order Raman spectra are independent of polytype and impurity type.ABM, ABC, ABPol2012-12-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392012000600003Materials Research v.15 n.6 2012reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/S1516-14392012005000108info:eu-repo/semantics/openAccessLin,ShenghuangChen,ZhimingLi,LianbiYang,Cheneng2012-11-20T00:00:00Zoai:scielo:S1516-14392012000600003Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2012-11-20T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false |
| dc.title.none.fl_str_mv |
Effect of impurities on the Raman scattering of 6H-SiC crystals |
| title |
Effect of impurities on the Raman scattering of 6H-SiC crystals |
| spellingShingle |
Effect of impurities on the Raman scattering of 6H-SiC crystals Lin,Shenghuang Raman scattering 6H-SiC impurity |
| title_short |
Effect of impurities on the Raman scattering of 6H-SiC crystals |
| title_full |
Effect of impurities on the Raman scattering of 6H-SiC crystals |
| title_fullStr |
Effect of impurities on the Raman scattering of 6H-SiC crystals |
| title_full_unstemmed |
Effect of impurities on the Raman scattering of 6H-SiC crystals |
| title_sort |
Effect of impurities on the Raman scattering of 6H-SiC crystals |
| author |
Lin,Shenghuang |
| author_facet |
Lin,Shenghuang Chen,Zhiming Li,Lianbi Yang,Chen |
| author_role |
author |
| author2 |
Chen,Zhiming Li,Lianbi Yang,Chen |
| author2_role |
author author author |
| dc.contributor.author.fl_str_mv |
Lin,Shenghuang Chen,Zhiming Li,Lianbi Yang,Chen |
| dc.subject.por.fl_str_mv |
Raman scattering 6H-SiC impurity |
| topic |
Raman scattering 6H-SiC impurity |
| description |
Raman spectroscopy was applied to different-impurities-doped 6H-SiC crystals. It had been found that the first-order Raman spectra of N-, Al- and B-doped 6H-SiC were shifted to higher frequency when comparing with undoped samples. However, the first-order Raman spectra of V-doped sample was shifted to lower frequency, revealing that there existed low free carrier concentration, which might be induced by the deep energy level effect of V impurity. Meanwhile, the second-order Raman spectra are independent of polytype and impurity type. |
| publishDate |
2012 |
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2012-12-01 |
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info:eu-repo/semantics/article |
| dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
| format |
article |
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publishedVersion |
| dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392012000600003 |
| url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392012000600003 |
| dc.language.iso.fl_str_mv |
eng |
| language |
eng |
| dc.relation.none.fl_str_mv |
10.1590/S1516-14392012005000108 |
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info:eu-repo/semantics/openAccess |
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openAccess |
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text/html |
| dc.publisher.none.fl_str_mv |
ABM, ABC, ABPol |
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ABM, ABC, ABPol |
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Materials Research v.15 n.6 2012 reponame:Materials research (São Carlos. Online) instname:Universidade Federal de São Carlos (UFSCAR) instacron:ABM ABC ABPOL |
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Universidade Federal de São Carlos (UFSCAR) |
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ABM ABC ABPOL |
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ABM ABC ABPOL |
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Materials research (São Carlos. Online) |
| collection |
Materials research (São Carlos. Online) |
| repository.name.fl_str_mv |
Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR) |
| repository.mail.fl_str_mv |
dedz@power.ufscar.br |
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1754212661641347072 |