Semiconducting and insulating oxides applied to electronic devices

• Ano de defesa: 2018
• Autor(a) principal: Boratto, Miguel Henrique
• Tipo de documento: Tese
• Tipo de acesso: Acesso aberto
• Idioma: eng
• Instituição de defesa: Universidade Estadual Paulista (Unesp)
• Palavras-chave em Português: Óxidos inorgânicos; SnO2; ZrO2; Dispositivos eletrônicos; Inorganic oxides; Electronic devices
• Link de acesso: http://hdl.handle.net/11449/153215

This work comprises the study of oxide semiconductors (Sb-doped SnO2 and TiO2) and insulating materials (ZrO2) obtained by sol-gel, and the investigation of their properties, aiming to evaluate these materials as alternative for application in electronic devices, such as Metal-Insulator-Metal (MIM) capacitors, Thin Film Transistors (TFT), and Memristors. The SnO2 thin films were obtained by two solutions with different aging times. The ZrO2 thin films were also obtained by two solutions, synthesized from two distinct methods, non-alkoxide and polymeric. The thin film deposition occurred mainly by dip- and spin-coating techniques, and the characterizations were performed through the techniques of XRD, AFM, SEM, Confocal Microscopy, EDX, RBS, TG/DSC, UV-Vis Spectroscopy, cyclic voltammetry and Impedance spectroscopy, in order to better understand the relations between the morphological and structural properties of these films and their electrical properties. The properties of Sb:SnO2 and ZrO2 thin films were analyzed in TFT and MIM devices, respectively. Alternatively TiO2 was coupled with Sb:SnO2 and applied to Memristors due to the electrical properties of this semiconductor junction. The analysis and results of the different devices investigated in this work are discussed considering their several characteristics, and it is also suggested options for possible enhancements for these devices become comparable to existent state-of-the-art devices.