Análise teórica da superfície Si(111)-(7x7)

• Ano de defesa: 2007
• Autor(a) principal: Mikhail, Hanna Degani
• Tipo de documento: Dissertação
• Tipo de acesso: Acesso aberto
• Idioma: por
• Instituição de defesa: Universidade Federal de Uberlândia; BR; Programa de Pós-graduação em Física; Ciências Exatas e da Terra; UFU
• Palavras-chave em Português: Teoria do funcional da densidade; Pseudopotenciais; Si(111) (7x7); Clorobenzeno; Adsorção física; Density functional theory; Pseudopotential; Chlorobenzene; Physics adsorption; CNPQ::CIENCIAS EXATAS E DA TERRA::FISICA
• Link de acesso: https://repositorio.ufu.br/handle/123456789/15681

In this work, wecarry out theoretical study of the silicon surface reconstruction (7x7) grown in the [111] direction, denoted by Si(111) (7x7), using the Density Functional Theory formalism, within the Local Density Approximation (LDA) for the exchange correlation term. The interaction with the valence electrons and the core ion (nucleus more core electrons) was described by norm conserving, non local pseudopotential approach, compatible with the LDA. The one electron Kohn Sham equations was solved self consistently, by expanding the one electron functions in terms of linear combination of numerical atomic orbitals. All the calculations were realized using the Siesta computational code. Using the clean surface reconstruction model of Si(111) (7x7), propose by Takayanagi et al.[1, 2], we modeled the surface as a slab, in which the (7x7) unitary cell contained 200 Si atoms distributed in one adatom layer (Si atoms on the topmost layer) and the other four layers, with 49 H atoms used for saturate the dangling bonds of the most internal layer of the slab. The structural analysis of the Si(111) (7x7) reconstructed surface and the electronic structure analysis showed a good agreement with both the experimental and theoretical results disposable, reproducing correctly the band structure, the surface levels and the metallic character of this surface. The obtained energy per surface atom was 1,132 eV with respect to the bulk energy. It was performed the study of the vacancy energy formation of adatoms on this surface. We find an average value of 1,2 eV of a single vacancy formation of adatom the Si(111) (7x7) surface. The analysis of the energy bands made possible to identify the electronic states due to the adatoms dangling bonds. As a first application of the obtained results to the Si(111) (7x7) clean surface, we investigated the possible states of the physisorption of the chlorobenzene molecules on specific sites on the Si(111) (7x7) surface. This study showed that chlorobenzene molecules interact with the surface for distances around 3,0 Å from the adatoms. We also inferred that the triangular faulted subunit sites are energetically most favorable to the adsorption than the correspondent triangular unfaulted subunit sites. We plotted the adsorption energy curve of the chlorobenzene on the corner adatom at the triangular faulted unitary cell (7x7). The equilibrium distance and the adsorption energy obtained was 3,005 Å and 0,161 eV, respectively. The magnitude of this interaction corresponds to a physics adsorption of the chlorobenzene molecule on the Si(111) (7x7) surface.