Crescimento e caracterização de Nanocristais semicondutores em matrizes Vítreas

• Ano de defesa: 2004
• Autor(a) principal: Mendes Junior, Djalma Rosa
• Tipo de documento: Dissertação
• Tipo de acesso: Acesso aberto
• Idioma: por
• Instituição de defesa: Universidade Federal de Uberlândia; Brasil; Programa de Pós-graduação em Física
• Palavras-chave em Português: Semicondutores; Fotoluminescência; CNPQ::CIENCIAS EXATAS E DA TERRA::FISICA
• Link de acesso: https://repositorio.ufu.br/handle/123456789/27349; http://doi.org/10.14393/ufu.di.2004.18

It was synthesized and c haracterized semiconductor nanocrystals CdSxSei-x and CdTe hosted in glasses. It was obtained optical absorption specter (AO), Photoluminescence (PL) and Raman. Both AO and PL bands dislocate for higher wavelength when submitted to 550°C with time increasing, starting growing the CdSxSe-|.x nanocrystals. PL spectra, obtained as a function of temperature, showed two important bands, one is attributed by the energy leveis transitions inside the quantum dots and other by nanocrystal defects. Raman Specter, obtained at room temperature, confirm the CdSxSe^x nanocrystals growing in glasses host with composites 4OSÍO2.30Na2CO3. 29B2O3. 1AI2O3 (mol%)+ [2CdO + 2S + 2Se] (%wt). Through the strong confinement, it's possible to affirm the quantum dots average radius about 20 A.