Influência de parâmetros físicos no desempenho de PLEDs

• Ano de defesa: 2016
• Autor(a) principal: Silva, Silésia de Fátima Curcino da
• Tipo de documento: Tese
• Tipo de acesso: Acesso aberto
• Idioma: por
• Instituição de defesa: Universidade Federal de Uberlândia; Brasil; Programa de Pós-graduação em Física
• Palavras-chave em Português: Física; Diodos emissores de luz; Polímeros; Fotoluminescência; Diodo emissor de luz polimérico; Polímero luminescente; Temperatura de relaxação molecular; MEH-PPV; LAPPS16; Seleneto de cobre; CNPQ::CIENCIAS EXATAS E DA TERRA::FISICA
• Link de acesso: https://repositorio.ufu.br/handle/123456789/17933; https://doi.org/10.14393/ufu.te.2016.131

Scientific research to development of new film production techniques with good physical properties is of great importance to research areas such as organic electronics. However, the implications caused by electric field, temperature and positive pressure on organic materials is an important point to be understood in order to avoid problems in the emission efficiency of polymer light emitting diodes (PLEDs). Understand and clarify the effects of electrode/polymer and polymer/polymer interfaces as well as the application of external pressure on the optical and electrical stability of the devices are essential steps towards understanding, and consequently the development of devices with better performances.1 In this sense, this study we investigated the effects of external processes such as: electric field, temperature and external pressure on the emission efficiency poly (2- methoxy-5- (2'-ethyl-hexyloxy) -1,4-phenylenevinylene) (MEH-PPV) film in PLED structure. It was possible to correlate the photoluminescence (PL) depends for different laser polarization (linear or circular), on the polarization voltage (forward and reverse) and on MEH-PPV molecular ß-relaxation (Tß~ 220K) and α-relaxation (Tα ~ 330K) temperatures. Furthermore, we investigated the effects induced by application of positive pressure on device at next temperature Tß MEH-PPV, it showing a break in the symmetry of amorphous film of MEH-PPV spin-coated, the effect can be avoided by annealing treatment the device (T> Tg) or altering the polymer/polymer interface. We also investigated the effect of electric field in the thermal stability of PLED device based on light-emitting polymer poly[(9,9-dihexyl-9H- fluorene-2,7diyl)-1,2-ethenediyl-1,4-phenylene-1,2-ethenediyl] (LAPPS16) as active layer. We showed that profiles of the photoluminescence and electroluminescence spectra are similar, showing that mechanisms involved in the generation of excited states do not significantly change the radiative recombination process. However, despite they have the same photophysical process, we showed that non-radiative processes thermally activated are quite different between the PL and EL, demonstrating that these two emission processes are not directly related. Finally, we performed optical and electrical characterization of thin films, transparent and flexible copper selenide (Cu2-xSe) demonstrating that it is possible its application as hole injector electrode for PLEDs devices exhibiting good properties, being obtained through simple techniques at low cost. Emitting diodes were processed using the Cu2-xSe as anode electrode and as active layer we use the MEH-PPV polymer. We showed that Cu2-xSe film exhibited good electrical stability with sheet resistance values of ~148 Ω/□ and bandgap energy of ~2,3eV, whose values are suitable for applications in electronic devices. We also showed through photoluminescence and electroluminescence that Cu2-xSe films have emission properties and by PLEDs using Cu2-xSe as electrode, we investigated the energy barrier for charge carriers at electrode/polymer interface and we analyzed charge transport mechanisms present in these devices.