Avaliação do "magnetron sputtering" como técnica para obtenção de MgB2

Detalhes bibliográficos
Ano de defesa: 2014
Autor(a) principal: Almeida, Manoela Adams de
Orientador(a): Não Informado pela instituição
Banca de defesa: Não Informado pela instituição
Tipo de documento: Dissertação
Tipo de acesso: Acesso aberto
Idioma: por
Instituição de defesa: Universidade Federal de Santa Maria
BR
Física
UFSM
Programa de Pós-Graduação em Física
Programa de Pós-Graduação: Não Informado pela instituição
Departamento: Não Informado pela instituição
País: Não Informado pela instituição
Palavras-chave em Português:
Link de acesso: http://repositorio.ufsm.br/handle/1/9254
Resumo: In this work a survey of the potentialities and limitations of magnetron sputtering as a tool for the production of MgB2 superconductors thin films has been made. Instead of the usual approaches, like co-deposition onto heated substract or room temperature deposition of MgB multilayers for ex situ annealing, the direct deposition of multilayers onto heated substract has been tested. The samples have been deposited onto Si waffers from Mg and B targets. They have been produced by the alternated grown of Mg and B layers, holding the substrate temperatur at 200 and 300 C during the depostion. Pos deposition annealings were performed at temperatures rangingo from 560 up to 800. In order to improve the sticking coefficient of Mg atoms at the substrate, the ayers thicknesses were held under ten monoatomic layers. The composition and structural properties were determined by X-Ray diffraction. The results have shown that, for the used temperatures, the Mg sticking coefficient onto B is just relevant ultil the second or third Mg monoatomic layer is completed. From this point, all Mg atoms impinging the substrate are re-emmitted to the chamber atmospherre. As a consequence, the direct production of MgB2 from the sucessive deposition of B and Mg are not effective, unless the layers thicknesses do not surpass a few tenths of nanometers.