Circuito de acionamento de chaves semicondutoras de potência empregando transformador piezoelétrico

• Ano de defesa: 2020
• Autor(a) principal: Fabero, Fabrício Girardon
• Tipo de documento: Dissertação
• Tipo de acesso: Acesso aberto
• Idioma: por
• Instituição de defesa: Universidade Federal de Santa Maria; Brasil; Engenharia Elétrica; UFSM; Programa de Pós-Graduação em Engenharia Elétrica; Centro de Tecnologia
• Palavras-chave em Português: Transformador piezoelétrico; Conversor classe-E; Circuito de gate-driver; Piezoelectric transformer; Class-E converter; Gate-driver circuit; CNPQ::ENGENHARIAS::ENGENHARIA ELETRICA
• Link de acesso: http://repositorio.ufsm.br/handle/1/22593

This thesis presents a proposal for a gate-driver system, for MOSFET and IGBT power semiconductor devices, which uses a piezoelectric transformer in the power circuit and communication channel. Thus, a bibliographical review of the already known topologies of gate-drivers communication channel and energy transmission was conducted, focusing on isolated structures, where the potentiality of using piezoelectric transformers in this type of application was identified. Therefore, for simplicity, an E-Class converter was used to power the transformer, implementing both the isolated source and the communication channel of the gate-driver circuit. So, the study of the Class-E converter was conducted, involving the modeling of the converter together with a screening of the resonance frequency and the piezoelectric transformer's ratios. A detailed analysis of the piezoelectric transformer was also made to obtain its equivalent electrical model to identify the resonance frequencies and, consequently, its point of operation. Also, regarding the E-Class converter, modulation and demodulation techniques for the gate-driver circuit command signal are proposed. Finally, experimental results for a gate-driver circuit with 30 V supply voltage and command signal between -5 and +15 V are presented for the validation of the proposal.