Detalhes bibliográficos
Ano de defesa: |
2018 |
Autor(a) principal: |
Santos, Ikaro Arthur Dantas |
Orientador(a): |
Tentardini, Eduardo Kirinus |
Banca de defesa: |
Não Informado pela instituição |
Tipo de documento: |
Dissertação
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Tipo de acesso: |
Acesso aberto |
Idioma: |
por |
Instituição de defesa: |
Não Informado pela instituição
|
Programa de Pós-Graduação: |
Pós-Graduação em Ciência e Engenharia de Materiais
|
Departamento: |
Não Informado pela instituição
|
País: |
Não Informado pela instituição
|
Palavras-chave em Português: |
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Palavras-chave em Inglês: |
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Área do conhecimento CNPq: |
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Link de acesso: |
http://ri.ufs.br/jspui/handle/riufs/10595
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Resumo: |
Zr-Hf-N and Zr-Hf thin films were deposited by reactive magnetron sputtering in order to verify the influence of small hafnium contents that are present as contaminants on zirconium deposition targets. For this purpose different hafnium contents in the films were intentionally added by varying the deposition power. The samples were characterized by X-ray diffraction (XRD), dispersive energy X-ray spectroscopy (EDS), Rutherford backscattering spectroscopy (RBS) and nanohardness analyzes. The ZrHfN thin films were deposited and had a concentration of at% Hf of 0.49; 0.56; 0.80; 1.87 and 2.70. The deposited Zr-Hf alloys exhibited hafnium contents at up to 1.21%; 1.24; 4.35; 7.94 and 11.49. The crystalline phase obtained for the nitride films had a cubic face centered structure (FCC) and was not modified by the increase in hafnium content. The alloys presented amorphous with some crystalline regions of hexagonal structure. The hardness values ranged from 21.4 to 25.1 GPa for nitrides and from 6.1 to 8.4 GPa for zirconium alloys. |