Detalhes bibliográficos
Ano de defesa: |
2014 |
Autor(a) principal: |
Barin, Gabriela Borin |
Orientador(a): |
Barreto, Ledjane Silva
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Banca de defesa: |
Não Informado pela instituição |
Tipo de documento: |
Tese
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Tipo de acesso: |
Acesso aberto |
Idioma: |
por |
Instituição de defesa: |
Não Informado pela instituição
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Programa de Pós-Graduação: |
Pós-Graduação em Ciência e Engenharia de Materiais
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Departamento: |
Não Informado pela instituição
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País: |
Não Informado pela instituição
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Palavras-chave em Português: |
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Palavras-chave em Inglês: |
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Área do conhecimento CNPq: |
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Link de acesso: |
https://ri.ufs.br/handle/riufs/3524
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Resumo: |
Nowadays, a lot of studies are concentrate on graphene and graphene-like preparation, due to the broad application area of these materials. Preparation of high quality graphene with less impurities and defects is essential for graphene performance on electric, optics and bio-devices. The first study developed in this thesis contribute for high quality CVD graphene growth with continuous surface and impurities-free. Therefore, it was proposed an optimization on PMMA-based transfer process. Results showed that adding a second PMMA layer properly diluted (15% in anisole, which resulted in a 1.35% PMMA layer) produces higher quality graphene with fewer PMMA residues, non-cracked surface and lower sheet resistance. In the second study we reported investigations regarding ALD and spray technique deposition of Al2O3 to produce patterned graphene through area-selective CVD growth. ALD deposition was carried out using 120 and 200 cycles with 30 and 45 seconds of purging time. Al2O3 layers deposited with 200 cycles were stable and higher quality when compared with Al2O3 layers deposited with 120 cycles. Higher quality graphene was grown on copper substrate patterned using 45 seconds of purging time. It was observed that lower purging time lead to copper contamination by by-products which contaminated graphene during growth step. Results regarding AlCl3 spraying in order to deposit Al2O3 layers indicated that precursor concentration and deposition time had great influence on graphene and passivation layer final properties. The optimum concentration was found at 5mg/mL; lower concentration led to deposition of incomplete Al2O3 layers and higher concentration led to solid formation which hindered the precursor solution adhesion on copper foil. High quality graphene was grown on passivated copper using lower deposition times. Finally graphite and graphene-like structures were synthesized from double process which consisted of prior hydrothermal carbonization at 250 .C with subsequent pyrolysis at 500-1500.C. Results showed the determinant role of hydrothermal carbonization on graphitic structures formation with onion-like and graphene- like morphology. Direct pyrolysis of coconut coir dust led to an amorphous carbon material independently of pyrolysis temperature. |