Efeitos da inserção de íons de Cr4+/2+ na matriz cristalina do Bi12GeO20 : estudo de primeiros princípios

• Ano de defesa: 2018
• Autor(a) principal: Santana, Lucas Barreto
• Orientador(a): Lalic, Milan
• Tipo de documento: Dissertação
• Tipo de acesso: Acesso aberto
• Idioma: por
• Programa de Pós-Graduação: Pós-Graduação em Física
• Palavras-chave em Português: Bi12GeO20; BGO; Silenitas; Dopagem; Cromo; Propriedades eletrônicas; Densidades de estado; Carga de Bader; Energia de formação; Sítio de acomodação
• Palavras-chave em Inglês: Sillenite; Doping; Chrome (Cr); Electronic properties; Densities of stae; Bader charge; Formation energy; Accomodation sites
• Área do conhecimento CNPq: CIENCIAS EXATAS E DA TERRA::FISICA
• Link de acesso: http://ri.ufs.br/jspui/handle/riufs/9010

Bi12GeO20 (BGO) belongs to the family of sillenite crystals BMO, where M = Ge, Si, Ti. These compounds exhibit remarkable photorefractive e ect and therefore are used in the development of information and image storage technologies, holography, ampli cation of luminous signals and dynamic interferometry. One of the strategies used to enhance the properties of interest of these sillenites is doping. The defects can create photorefractive centers in the matrix, introducing energy levels within the gap, in uencing the electronic and optical properties of the selenites. Experimental work reported a curious behavior when using transition metal ions (TMI) as dopants. Most of the TMIs, including Cr ions, are allocated at the high symmetry site Ge4+, with the exception of Cu2+ which enters into the matrix at the low symmetry site of Bi3+. This is a surprising fact due to the di erence between ionic radii and charge states of the dopants and the substitution ion Ge4+. In this work the LAPW method, based on the DFT theory and implemented in the WIEN2k program, was used to study the electronic, structural and energetic properties of pure BGO and doped BGO with chromium ions. In the study of doped cases, Cr ions were inserted at the substitutional sites of Ge4+ and Bi3+ The calculations were performed for neutral and charged systems. The approximations for correlation and exchange e ects were made through GGA-PBE and mBJ potentials. Were performed calculations of lattice parameter optimization, relaxation of atomic positions, state density, Bader charge and formation energies of defects. It was possible to nd the lattice parameter, and the band gap energy os the BGO pure, to analyse the way how the neighbourhood of the substitutional site behaves with the presence of the defect and nd the states that populate the valence and conduction bands of the studies cases. These data were taking into account to measure the ions valence. The results of the modeling showed that Cr prefers to accommodate in the BGO matrix with Cr3+/4+ valences. The preferential accommodation site of Cr3+ is Bi3+, which didn't meet with what has been reported experimentally in the literature.