Structural and electronic properties of two-dimensional multiphase indium selenide crystals

• Ano de defesa: 2023
• Autor(a) principal: Guilherme Rodrigues Fontenele
• Tipo de documento: Dissertação
• Tipo de acesso: Acesso aberto
• Idioma: eng
• Instituição de defesa: Universidade Federal de Minas Gerais; Brasil; ICX - DEPARTAMENTO DE FÍSICA; Programa de Pós-Graduação em Física; UFMG
• Palavras-chave em Português: Scanning tunneling microscopy; Scanning tunneling spectroscopy; Indium selenide; Semiconductors; Electron backscatter diffraction; Microscopia de tunelamento de varredura; Semicondutores; Difração
• Link de acesso: http://hdl.handle.net/1843/77651; https://orcid.org/0000-0002-3650-1101

We successfully obtained two indium selenide crystals, with each of the samples having a different proportion of phases and polymorphs. From X-ray diffraction and electron backscattered diffraction measurements, we were able to quantify the proportion of phases in both the volume and surface regions of the crystals. Through microscopy measurements and tunneling spectroscopy, we were able to obtain high-resolution images of the lamellar structures at the nanometer scale, as well as determine the electronic densities of states of InSe and In2Se3, for each phase and polymorph.