Estudo comparativo dos ganhos relativos às técnicas de modulação em largura de pulso e dispositivos de banda larga em conversores multiníveis
Ano de defesa: | 2018 |
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Autor(a) principal: | |
Orientador(a): | |
Banca de defesa: | |
Tipo de documento: | Dissertação |
Tipo de acesso: | Acesso aberto |
Idioma: | por |
Instituição de defesa: |
Universidade Federal de Minas Gerais
UFMG |
Programa de Pós-Graduação: |
Não Informado pela instituição
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Departamento: |
Não Informado pela instituição
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País: |
Não Informado pela instituição
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Palavras-chave em Português: | |
Link de acesso: | http://hdl.handle.net/1843/BUOS-B44LWK |
Resumo: | Three-phase power electronic converters are widely used for various applications, which always demand equipment with less cost and greater eciency. This dissertation presents the loss characteristics for two-and three-level converters using silicon carbide (SiC) and silicon (Si) devices and modulators Selective Harmonic Elimination (SHE) and Space Vector Modulator (SVM). With the study it is possible dene gains due to the choice of devices, topology of converters and modulators. The study contributes with denition of the equations that correctly characterize the initial conditions for the SHE modulator. A methodology will be presented to obtain the switching angles for the modulation techniques of selective harmonics elimination Bipolar and Unipolar as well as the implementation of SHE modulators. It is also contemplated the design of output lter with objective to determine the performance of SV and SHE modulators for dierent switching frequencies. Finally, the gains related to the losses between highest and lowest switching conditions are veried considering the losses in converter and passive components of output lter |