Estudo in-situ de filmes magnéticos ultrafinos por magnetometria Kerr e técnicas de superfície

Detalhes bibliográficos
Ano de defesa: 2009
Autor(a) principal: Gustavo Fóscolo de Moura Gomes
Orientador(a): Não Informado pela instituição
Banca de defesa: Não Informado pela instituição
Tipo de documento: Dissertação
Tipo de acesso: Acesso aberto
Idioma: por
Instituição de defesa: Universidade Federal de Minas Gerais
UFMG
Programa de Pós-Graduação: Não Informado pela instituição
Departamento: Não Informado pela instituição
País: Não Informado pela instituição
Palavras-chave em Português:
Link de acesso: http://hdl.handle.net/1843/ESCZ-7YSH5J
Resumo: The aim of this work is to apply Kerr magnetometry to ultra-thinmagnetic films. A Kerr magnetometer operating in ultra high vacuum isdescribed, as well as the modications and optimizations we have done, to achieve atomic monolayer sensibility. We present measurements performed on samples with different magnetic properties, such as exchange bias effect, systems with magnetic anisotropy (determination of hard/soft axis) and others. The in-situ prepared samples were chemically and structurally characterized by means of surface sensitive techniques (XPS, LEED, RHEED, CEMS). In order to include the magneto-optic Kerr eect (MOKE) in the Maxwell equations, one term due to the Lorentz force is added to the electric displacement vector. Consequently, the electric permissivity tensor contains the magneto-optic constant and the relative magnetizations (mx, my and mx), and the magnetic information is included in the coecients of the Fresnel reection matrix. The Kerr intensity is calculated for a series of congurations of the Kerr magnetometer (angles of polarizers, modulator, etc.). To separate the three components of magnetization, we demonstrate that a linear combination of measurements at (at least) two different congurations of the magnetometer, is necessary. We have applied one of the developed methods to the FexCo1-x/Pd(100) system to calculate mz for different stoichiometries (x = 30, 50) and with thermal annealing of the films.