Fenômenos não-lineares de transporte elétrico induzidos por geração-recombinação em semicondutores

• Ano de defesa: 2005
• Autor(a) principal: Holokx de Abreu Aubuquerque
• Tipo de documento: Tese
• Tipo de acesso: Acesso aberto
• Idioma: por
• Instituição de defesa: Universidade Federal de Minas Gerais; UFMG
• Palavras-chave em Português: semicondutores; Fenomenos não-lineares; Oscilações; Oscilações não-lineares; Semicondutores; Condutividade elétrica; Física
• Link de acesso: http://hdl.handle.net/1843/ESCZ-6L6NFY

In this work, we studied theoretical models to explain the non-linear behavior of the electric transport of charge carriers in semiconductors. We focused the studies in the numerical integrations of differential equations to obtain the dynamics of the electric transport. In the models, we considered the most important processes of generation and recombination (g-r) of the charge carriers in semi-insulating (SI) GaAs samples grown by low-temperature molecular-beam epitaxy (LTMBE): impact ionization (generation) and field enhanced trapping (recombination). These two processes were included in a model of rate equations for the g-r processes to simulate the spontaneous low frequency electric current oscillations presented in GaAs SI samples grown by LTMBE. The simulation results showed the specific features of the experimental data, suggesting the microscopic model of the rate equations for the g-r processes is adequate to explain the non-linear behavior of the electric current in a circuit with GaAs SI samples. In addition, we proposed an equation for the j(E) characteristics of GaAs SI samples. This equation incorporates the two g-r processes mentioned above.