Éxcitons em semicondutores magnéticos diluídos

• Ano de defesa: 2006
• Autor(a) principal: ALVES, Erivelton de Oliveira
• Orientador(a): SOUZA, Márcio Adriano Rodrigues
• Tipo de documento: Dissertação
• Tipo de acesso: Acesso aberto
• Idioma: por
• Instituição de defesa: Universidade Federal de Goiás
• Programa de Pós-Graduação: Mestrado em Física
• Departamento: Ciências Exatas e da Terra
• País: BR
• Palavras-chave em Português: éxcitons; tunelamento ressonante
• Palavras-chave em Inglês: excitons; resonant tunneling
• Área do conhecimento CNPq: CNPQ::CIENCIAS EXATAS E DA TERRA::FISICA
• Link de acesso: http://repositorio.bc.ufg.br/tede/handle/tde/798

We investigate the resonant tunneling of electrons and holes in an asymmetric double quantum bit CdTe / CdMnTe in the presence of electric and magnetic fields applied along the growth direction. We show that in this case it is possible to achieve a condition of simultaneous resonant tunneling of electrons and holes with spin set, ie, a resonant tunneling of excitons polarized. Then we calculated the excitonic binding energy as a function of applied fields, showing the strong dependence of the binding energy with the tunneling of carriers. The electronic structure was calculated using the k ~ ~ p multiband Kane model. The eigenstates were obtained by solving numerically the equations ° C ~ the effective mass using the method of inverse power. The effects of lattice strain were treated by the Bir-Pikus model. The energy calculation of excitonic Dial-Up was conducted using the variational method. We consider the perfectly abrupt interfaces of the heterostructures, ie effects of enlargement of the interfaces were neglected.