Detalhes bibliográficos
Ano de defesa: |
2006 |
Autor(a) principal: |
ALVES, Erivelton de Oliveira
 |
Orientador(a): |
SOUZA, Márcio Adriano Rodrigues
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Banca de defesa: |
Não Informado pela instituição |
Tipo de documento: |
Dissertação
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Tipo de acesso: |
Acesso aberto |
Idioma: |
por |
Instituição de defesa: |
Universidade Federal de Goiás
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Programa de Pós-Graduação: |
Mestrado em Física
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Departamento: |
Ciências Exatas e da Terra
|
País: |
BR
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Palavras-chave em Português: |
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Palavras-chave em Inglês: |
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Área do conhecimento CNPq: |
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Link de acesso: |
http://repositorio.bc.ufg.br/tede/handle/tde/798
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Resumo: |
We investigate the resonant tunneling of electrons and holes in an asymmetric double quantum bit CdTe / CdMnTe in the presence of electric and magnetic fields applied along the growth direction. We show that in this case it is possible to achieve a condition of simultaneous resonant tunneling of electrons and holes with spin set, ie, a resonant tunneling of excitons polarized. Then we calculated the excitonic binding energy as a function of applied fields, showing the strong dependence of the binding energy with the tunneling of carriers. The electronic structure was calculated using the k ~ ~ p multiband Kane model. The eigenstates were obtained by solving numerically the equations ° C ~ the effective mass using the method of inverse power. The effects of lattice strain were treated by the Bir-Pikus model. The energy calculation of excitonic Dial-Up was conducted using the variational method. We consider the perfectly abrupt interfaces of the heterostructures, ie effects of enlargement of the interfaces were neglected. |